WO2026093850 - THIN-FILM TRANSISTORS WITH METAL OXIDE CHANNEL INTERFACES
National phase entry is expected:
Publication Number
WO/2026/093850
Publication Date
07.05.2026
International Application No.
PCT/IB2025/060686
International Filing Date
20.10.2025
Title **
[English]
THIN-FILM TRANSISTORS WITH METAL OXIDE CHANNEL INTERFACES
[French]
TRANSISTOR EN COUCHES MINCES AVEC INTERFACES DE CANAL D'OXYDE MÉTALLIQUE
Applicants **
ZINITE CORPORATION
Inventors
CADIEN, Ken
FLECK, Joel
KIM, Kwanghyun
Priority Data
63/714,396
31.10.2024
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
CIPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2390 | |
| EPO | Filing, Examination, Granting | 16659 | |
| Japan | Filing, Examination, Granting | 2461 | |
| South Korea | Filing, Examination, Granting | 2801 | |
| USA | Filing, Examination, Granting | 5740 |
Total:
30,051
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Abstract[English]
An example thin-film transistor includes a source, a drain, a gate, and a body of channel material disposed within the influence of the gate between the source and the drain. The body of channel material includes a metal oxide. The body of channel material forms a carrier channel between the source and the drain when sufficient voltage is applied to the gate. The source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.[French]
L'invention concerne un exemple de transistor en couches minces comprenant une source, un drain, une grille et un corps de matériau de canal disposé à l'intérieur de l'influence de la grille entre la source et le drain. Le corps de matériau de canal comprend un oxyde métallique. Le corps de matériau de canal forme un canal de porteuse entre la source et le drain lorsqu'une tension suffisante est appliquée à la grille. La source comprend un corps de matériau source qui comprend du ruthénium et un métal stabilisant l'oxyde qui comporte un oxyde qui présente une stabilité d'hydrogène supérieure à celle de l'oxyde de ruthénium.