WO2025172952 - METHOD FOR FORMING A LAYER OF SILICON DIOXIDE ON A LAYER OF SILICON NITRIDE
National phase entry is expected:
Publication Number
WO/2025/172952
Publication Date
21.08.2025
International Application No.
PCT/IB2025/051652
International Filing Date
14.02.2025
Title **
[English]
METHOD FOR FORMING A LAYER OF SILICON DIOXIDE ON A LAYER OF SILICON NITRIDE
[French]
PROCÉDÉ DE FORMATION D'UNE COUCHE DE DIOXYDE DE SILICIUM SUR UNE COUCHE DE NITRURE DE SILICIUM
Applicants **
LIONIX INTERNATIONAL BV
Inventors
FALKE, Floris
Priority Data
63/554,463
16.02.2024
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
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| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2024 | |
| EPO | Filing, Examination, Granting | 8113 | |
| Japan | Filing, Examination, Granting | 2153 | |
| South Korea | Filing, Examination, Granting | 2071 | |
| USA | Filing, Examination, Granting | 5940 |
Total:
20,301
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Abstract[English]
In accordance with a method of forming a waveguide on a substrate, a lower core silicon nitride layer is formed on a lower cladding layer disposed on a substrate. The silicon nitride layer is patterned to define a silicon nitride waveguide core. The exposed surfaces of the silicon nitride waveguide core are oxidized to form a cap oxide. Further, an upper cladding layer is formed over the cap oxide.[French]
Selon un procédé de formation d'un guide d'ondes sur un substrat, une couche de nitrure de silicium d'âme inférieure est formée sur une couche de gaine inférieure disposée sur un substrat. La couche de nitrure de silicium est modelée pour définir une âme de guide d'ondes en nitrure de silicium. Les surfaces exposées de l'âme de guide d'ondes en nitrure de silicium sont oxydées pour former un oxyde de recouvrement. En outre, une couche de gaine supérieure est formée sur l'oxyde de recouvrement.