WO2025062300 - SEMICONDUCTOR DEVICE WITH LAYER TRANSFER
National phase entry is expected:
Publication Number
WO/2025/062300
Publication Date
27.03.2025
International Application No.
PCT/IB2024/059043
International Filing Date
17.09.2024
Title **
[English]
SEMICONDUCTOR DEVICE WITH LAYER TRANSFER
[French]
DISPOSITIF À SEMI-CONDUCTEUR AVEC TRANSFERT DE COUCHE
Applicants **
SILANNA UV TECHNOLOGIES PTE LTD
Inventors
ATANACKOVIC, Petar
Priority Data
63/584,661
22.09.2023
US
18/394,688
22.12.2023
US
18/628,178
05.04.2024
US
18/830,089
10.09.2024
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 4532 | |
| EPO | Filing, Examination, Granting | 22526 | |
| Japan | Filing, Examination, Granting | 2588 | |
| South Korea | Filing, Examination, Granting | 2895 | |
| USA | Filing, Examination, Granting | 8140 |
Total:
40,681
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
) is epitaxially grown on the substrate, and an active device is formed in the active layer. A handle is bonded to a top surface of the active device. At least a portion of the substrate is removed from a backside of the integrated circuit.[French]
) est formée par croissance épitaxiale sur le substrat, et un dispositif actif est formé dans la couche active. Une poignée est liée à une surface supérieure du dispositif actif. Au moins une partie du substrat est retirée d'un côté arrière du circuit intégré.