WO2024189603 - POWER CURRENT SIGNAL GENERATION USING SENSE TRANSISTORS
National phase entry:
Publication Number
WO/2024/189603
Publication Date
19.09.2024
International Application No.
PCT/IB2024/052554
International Filing Date
15.03.2024
Title **
[English]
POWER CURRENT SIGNAL GENERATION USING SENSE TRANSISTORS
[French]
GÉNÉRATION DE SIGNAL DE COURANT DE PUISSANCE À L'AIDE DE TRANSISTORS DE DÉTECTION
Applicants **
INFINEON TECHNOLOGIES CANADA INC.
Inventors
XING, Nan
XIA, Yinglai
LI, Yalong
Priority Data
18/185,098
16.03.2023
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
CIPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2262 | |
| EPO | Filing, Examination, Granting | 14353 | |
| Japan | Filing, Examination, Granting | 2372 | |
| South Korea | Filing, Examination, Granting | 2512 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
26,239
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Contact Us
Abstract[English]
A power transistor current sense circuit. The control nodes of each of a power transistor and sense transistors are connected. The input nodes of the power transistor and each of the sense transistors are also connected. A voltage divider is connected between a reference voltage source and the output node of a second sense transistor. A negative feedback circuit is connected between the output of the voltage divider and the output node of the first sense transistor. The negative feedback circuit forces a voltage at the output node of the first sense transistor to be approximately equal to the divided voltage. A power transistor current determination component measures a sense current that passes through the first sense transistor, and from that detects the current passing through the power transistor.[French]
L'invention concerne un circuit de détection de courant de transistor de puissance. Les nœuds de commande de chacun d'un transistor de puissance et de transistors de détection sont connectés. Les nœuds d'entrée du transistor de puissance et de chacun des transistors de détection sont également connectés. Un diviseur de tension est connecté entre une source de tension de référence et le nœud de sortie d'un second transistor de détection. Un circuit de rétroaction négative est connecté entre la sortie du diviseur de tension et le nœud de sortie du premier transistor de détection. Le circuit de rétroaction négative force une tension au niveau du nœud de sortie du premier transistor de détection à être approximativement égale à la tension divisée. Un composant de détermination de courant de transistor de puissance mesure un courant de détection qui traverse le premier transistor de détection, et à partir de celui-ci détecte le courant traversant le transistor de puissance.