WO2025022179 - A perovskite photovoltaic element comprising a metal oxide layer between a perovskite photoactive layer and a back electrode, and having a n-i-p-n architecture
National phase entry is expected:
Publication Number
WO/2025/022179
Publication Date
30.01.2025
International Application No.
PCT/IB2024/000423
International Filing Date
27.07.2024
Title **
[German]
A perovskite photovoltaic element comprising a metal oxide layer between a perovskite photoactive layer and a back electrode, and having a n-i-p-n architecture
[English]
A PEROVSKITE PHOTOVOLTAIC ELEMENT COMPRISING A METAL OXIDE LAYER BETWEEN A PEROVSKITE PHOTOACTIVE LAYER AND A BACK ELECTRODE, AND HAVING A N-I-P-N ARCHITECTURE
[French]
ÉLÉMENT PHOTOVOLTAÏQUE À BASE DE PÉROVSKITE COMPRENANT UNE COUCHE D'OXYDE MÉTALLIQUE ENTRE UNE COUCHE PHOTOACTIVE DE PÉROVSKITE ET UNE ÉLECTRODE ARRIÈRE, ET AYANT UNE ARCHITECTURE N-I-P-N
Applicants **
HELIATEK GMBH
Inventors
UHRICH, Christian
WEISS, Andre
LE, Phuong
Priority Data
102023120027.5
27.07.2023
DE
23196443.8
11.09.2023
EP
Application details
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2208 | |
| EPO | Filing, Examination, Granting | 8711 | |
| Japan | Filing, Examination, Granting | 2247 | |
| South Korea | Filing, Examination, Granting | 2285 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
20,191
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
The present invention relates to a perovskite photovoltaic element (100), comprising a transparent front electrode (2), a back electrode (12), and a stack (20) arranged between the front electrode (2) and the back electrode (12) having a n-i-p-n architecture with a perovskite photoactive layer (5) as i-layer, comprising in sequence the following layers: a) the transparent front electrode (2); b) a doped or non-doped n-type layer (ETL) (3) comprising an electron transport material (ETM), wherein the LUMO of the n-type layer is equal or less negative than -4.4 eV; c) the perovskite photoactive layer (5) comprising at least an inorganic perovskite or an organic perovskite absorber material; d) a doped or non-doped p-type layer (HTL) (7) comprising a hole transport material (HTM), wherein the HOMO of the p-type layer (7) is equal or more negative than -5.0 eV; e) a n-type interlayer (9) comprising an electron transport material (ETM), wherein the LUMO of the n-type interlayer (9) is equal or more negative than -4.0 eV; e) a metal oxide layer (11); and f) the back electrode (12), wherein the back electrode (12) is formed from a metal or an alloy thereof.[French]
La présente invention concerne un élément photovoltaïque à base de pérovskite (100), comprenant une électrode avant transparente (2), une électrode arrière (12), et un empilement (20) disposé entre l'électrode avant (2) et l'électrode arrière (12) ayant une architecture n-i-p-n avec une couche photoactive de pérovskite (5) en tant que couche i, comprenant en séquence les couches suivantes : a) l'électrode avant transparente (2) ; b) une couche de type n (ETL) dopée ou non dopée (3) comprenant un matériau de transport d'électrons (ETM), la LUMO de la couche de type n étant inférieure ou égale à -4,4 eV ; c) la couche photoactive de pérovskite (5) comprenant au moins une pérovskite inorganique ou un matériau absorbeur de pérovskite organique ; d) une couche de type p (HTL) dopée ou non dopée (7) comprenant un matériau de transport de trous (HTM), l'HOMO de la couche de type p (7) étant supérieure ou égale à -5,0 eV ; e) une couche intermédiaire de type n (9) comprenant un matériau de transport d'électrons (ETM), la LUMO de la couche intermédiaire de type n (9) étant supérieure ou égale à -4,0 eV ; e) une couche d'oxyde métallique (11) ; et f) l'électrode arrière (12), l'électrode arrière (12) étant formée à partir d'un métal ou d'un alliage de celui-ci.