WO2024150022 - RESISTIVE RANDOM-ACCESS MEMORY (RERAM) CONFIGURED FOR OVERCOMING THE AFFECTS OF READ DISTURB
National phase entry is expected:
Publication Number
WO/2024/150022
Publication Date
18.07.2024
International Application No.
PCT/IB2023/000008
International Filing Date
13.01.2023
Title **
[English]
RESISTIVE RANDOM-ACCESS MEMORY (RERAM) CONFIGURED FOR OVERCOMING THE AFFECTS OF READ DISTURB
[French]
MÉMOIRE VIVE RÉSISTIVE (RERAM) CONFIGURÉE POUR SURMONTER LES EFFETS DE PERTURBATION DE LECTURE
Applicants **
WEEBIT NANO LTD.
24 Hanagar Street
4527713 Hod Hasharon, IL
Inventors
MOLAS, Gabriel
Grenoble, FR
PICCOLBONI, Giuseppe
Grenoble, FR
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
ILPO
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1214 | |
| EPO | Filing, Examination | 9122 | |
| Japan | Filing | 589 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 4110 |
Total: 15517 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
Resistive random-access memories (ReRAMs) suffer from a read disturb phenomenon that results from the fact that the read and programming operations use the same voltage polarity, though at different voltages. After a number of reads, which may be small or large depending on the characteristic of each cell, outlier cells distinctly switch after a much small number of reads than other cells. Accordingly, a process comprising SET or RESET operation of the ReRAM cells, is followed by a CLEAN operation. The CLEAN operation involves application of a cleaning voltage that is greater than the read voltage and lesser than the programming voltage. Subsequently, a READ operation is performed to identify those ReRAM cells that have switched from their expected state. In an embodiment a reprogramming operation takes place to fix the resistive filament of the ReRAM cells identified to suffer from the read disturb.[French]
L'invention concerne des mémoires vives résistives (ReRAM) qui souffrent d'un phénomène de perturbation de lecture qui résulte du fait que les opérations de lecture et de programmation utilisent la même polarité de tension, bien qu'à des tensions différentes. Après un certain nombre de lectures, qui peut être petit ou grand en fonction de la caractéristique de chaque cellule, les cellules aberrantes commutent distinctement après un nombre de lectures bien inférieur à celui des autres cellules. En conséquence, un processus comprenant une opération d'initialisation ou de réinitialisation des cellules ReRAM, est suivi d'une opération de nettoyage. L'opération de nettoyage consiste à appliquer une tension de nettoyage qui est supérieure à la tension de lecture et inférieure à la tension de programmation. Ensuite, une opération de lecture est mise en œuvre afin d'identifier les cellules ReRAM qui ont commuté de leur état attendu. Dans un mode de réalisation, une opération de reprogrammation a lieu pour fixer le filament résistif des cellules ReRAM identifiées comme souffrant de la perturbation de lecture.