WO2023002466 - STRESS MANAGEMENT LAYER FOR GAN HEMT
National phase entry:
Publication Number
WO/2023/002466
Publication Date
26.01.2023
International Application No.
PCT/IB2022/058992
International Filing Date
22.09.2022
Title **
[English]
STRESS MANAGEMENT LAYER FOR GAN HEMT
[French]
COUCHE DE GESTION DE CONTRAINTE POUR HEMT À GAN
Applicants **
IQE PLC
Pascal Close
St. Mellons
Cardiff CF3 0LW, GB
Inventors
KAESS, Felix
Pascal Close
St. Mellons
Cardiff CF3 0LW, GB
KAO, Chen-Kai
Pascal Close
St. Mellons
Cardiff CF3 0LW, GB
LABOUTIN, Oleg
Pascal Close
St. Mellons
Cardiff CF3 0LW, GB
Priority Data
2110537.4
22.07.2021
GB
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1288 | |
| EPO | Filing, Examination | 6705 | |
| Japan | Filing | 589 | |
| South Korea | Filing | 575 | |
| USA | Filing, Examination | 2910 |
Total: 12067 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A high electron mobility transistor 22 comprising a nucleation layer 14 having a first lattice constant, a back-barrier layer 24 having a second lattice constant and a stress management layer 26 having a third lattice constant which is larger than both first and second lattice constants. The stress management layer 26 compensates some or all of the stress due to the lattice mismatch between the nucleation layer 14 and back barrier layer 24 so that the resulting structure experiences less bow and warp.[French]
L'invention concerne un transistor à haute mobilité d'électrons (22) qui comprend une couche de nucléation (14) ayant une première constante de réseau, une couche barrière arrière (24) ayant une deuxième constante de réseau et une couche de gestion de contrainte (26) ayant une troisième constante de réseau supérieure aux première et deuxième constantes de réseau. La couche de gestion de contrainte (26) compense tout ou partie de la contrainte due à la désadaptation de réseau entre la couche de nucléation (14) et la couche barrière arrière (24) de sorte que la structure résultante subit moins de bombement et de gauchissement.