WO2022118294 - DISLOCATION TYPE AND DENSITY DISCRIMINATION IN SEMICONDUCTOR MATERIALS USING CATHODOLUMINESCENCE MEASUREMENTS
National phase entry:
Publication Number
WO/2022/118294
Publication Date
09.06.2022
International Application No.
PCT/IB2021/061339
International Filing Date
04.12.2021
Title **
[English]
DISLOCATION TYPE AND DENSITY DISCRIMINATION IN SEMICONDUCTOR MATERIALS USING CATHODOLUMINESCENCE MEASUREMENTS
[French]
DISCRIMINATION DE TYPE DE DISLOCATION ET DE DENSITÉ DANS DES MATÉRIAUX SEMI-CONDUCTEURS À L'AIDE DE MESURES DE CATHODOLUMINESCENCE
Applicants **
ATTOLIGHT AG
EPFL Innovation Park, Building D
1015 Lausanne, CH
Inventors
FOUCHIER, Marc
EPFL Innovation Park, Building D
1015 Lausanne, CH
MONACHON, Christian
EPFL Innovation Park, Building D
1015 Lausanne, CH
Priority Data
63/121,752
04.12.2020
US
17/537,422
29.11.2021
US
Application details
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International Searching Authority |
EPO
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1314 | |
| EPO | Filing, Examination | 6367 | |
| Japan | Filing | 591 | |
| South Korea | Filing | 607 | |
| USA | Filing, Examination | 2710 |
Total: 11589 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.[French]
L'invention concerne un microscope à cathodoluminescence et un procédé qui sont utilisés pour identifier et classifier des dislocations dans un échantillon semi-conducteur. Au moins deux images polarisées en CL sont obtenues simultanément à partir de l'échantillon. Les images sont ajoutées ensemble pour obtenir une image d'intensité totale. Une différence normalisée des images est prise pour obtenir un degré d'image de polarisation (DOP). L'intensité totale et les images DOP sont comparées pour différencier des dislocations de bord et des dislocations de vis à l'intérieur de l'échantillon. Une densité de dislocation de bord et une densité de dislocation de vis peuvent ensuite être calculées.