WO2022101858 - MIXED STRAIN MULTI-QUANTUM WELL SUPERLUMINESCENT LIGHT EMITTING DIODE
National phase entry:
Publication Number
WO/2022/101858
Publication Date
19.05.2022
International Application No.
PCT/IB2021/060528
International Filing Date
12.11.2021
Title **
[English]
MIXED STRAIN MULTI-QUANTUM WELL SUPERLUMINESCENT LIGHT EMITTING DIODE
[French]
DIODE SUPERLUMINESCENTE À PUITS QUANTIQUES MULTIPLES À CONTRAINTE MIXTE
Applicants **
DENSELIGHT SEMICONDUCTORS PTE LTD
6 Changi North Street 2
Singapore 498831, SG
Inventors
HOGAN, Royston
403 Bukit Batok West Ave 7, #07-20
Singapore 650403, SG
PIPER, Andy
27 Lentor Green
Singapore 789276, SG
RAJGOPAL, Rajan
237 Arcadia Road, #08-07
Singapore 289844, SG
RAI, Ashish Kumar
702 Upper Changi Road East #03-07
Singapore, SG
DHEERAJ, Dasa Lakshmi Narayana
154 Mariam Way, #05-04, Ballota Park Condo
Singapore 507081, SG
Priority Data
63/112,905
12.11.2020
US
63/169,192
31.03.2021
US
63/173,764
12.04.2021
US
63/243,385
13.09.2021
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
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| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
MOIP
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Translation |
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Recalculate
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1429 | |
| EPO | Filing, Examination | 8101 | |
| Japan | Filing | 595 | |
| South Korea | Filing | 672 | |
| USA | Filing, Examination | 7510 |
Total: 18307 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A superluminescent light emitting diode (SLED) includes an active layer that includes a set of mixed strain quantum wells. The set of mixed strain quantum wells includes a set of compressive strained quantum wells and a set of tensile strained quantum wells. A potential difference applied across the SLED causes movement of electron carriers and hole carriers towards the active layer. Radiative recombination of electron and hole pairs in the set of compressive strained quantum wells enables emission of laterally polarized light and radiative recombination of electron and hole pairs in the set of tensile strained quantum wells enables emission of vertically polarized light. A combination of the laterally polarized light and vertically polarized light results in the emission of incoherent light from the SLED.[French]
La présente invention concerne une diode superluminescente (DSL) qui comprend une couche active qui comprend un ensemble de puits quantiques à contrainte mixte. L'ensemble de puits quantiques à contrainte mixte comprend un ensemble de puits quantiques contraints par compression et un ensemble de puits quantiques contraints par traction. Une différence de potentiels appliquée sur la DSL provoque le mouvement de porteurs d'électrons et de porteurs de trous vers la couche active. La recombinaison radiative de paires d'électrons et de trous dans l'ensemble de puits quantiques contraints par compression permet l'émission de lumière polarisée latéralement et la recombinaison radiative de paires d'électrons et de trous dans l'ensemble de puits quantiques contraints par traction permet l'émission de lumière polarisée verticalement. Une combinaison de la lumière polarisée latéralement et de la lumière polarisée verticalement entraîne l'émission de lumière incohérente à partir de la DSL.