WO2023073404 - METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE
National phase entry:
Publication Number
WO/2023/073404
Publication Date
04.05.2023
International Application No.
PCT/IB2021/059945
International Filing Date
27.10.2021
Title **
[English]
METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE
[French]
PROCÉDÉS ET SYSTÈMES DE CHAUFFAGE D'UN SUBSTRAT À LARGE BANDE INTERDITE
Applicants **
SILANNA UV TECHNOLOGIES PTE LTD
10 Collyer Quay
#10-01 Ocean Financial Centre
Singapore 049315, SG
Inventors
ATANACKOVIC, Petar
37 Brandl Street
Eight Mile Plains, Queensland 4113, AU
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MOIP
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1884 | |
| EPO | Filing, Examination | 14287 | |
| Japan | Filing | 594 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 6710 |
Total: 23957 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 µm to 40 µm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.[French]
Des procédés et des systèmes de chauffage d'un substrat dans un processus de dépôt sous vide comportent un dispositif chauffant résistif présentant un élément chauffant résistif. La chaleur rayonnante émise par l'élément chauffant résistif présente une longueur d'onde dans une bande d'infrarouge moyen allant de 5 µm à 40 µm qui correspond à une bande d'absorption de phonons du substrat. Le substrat comprend un matériau semi-conducteur à large bande interdite et présente une surface non revêtue et une surface de dépôt opposée à la surface non revêtue. Le dispositif de chauffage résistif et le substrat sont positionnés dans une chambre de dépôt sous vide. La surface non revêtue du substrat est espacée du dispositif de chauffage résistif et lui fait face. La surface non revêtue du substrat est directement chauffée par absorption de la chaleur rayonnante.