WO2026109625 - HALBLEITERELEMENT MIT SÄTTIGUNGSSTROMBEGRENZUNG
National phase entry is expected:
Publication Number
WO/2026/109625
Publication Date
28.05.2026
International Application No.
PCT/EP2025/083622
International Filing Date
20.11.2025
Title **
[German]
HALBLEITERELEMENT MIT SÄTTIGUNGSSTROMBEGRENZUNG
[English]
SEMICONDUCTOR ELEMENT WITH SATURATION CURRENT LIMITING
[French]
ÉLÉMENT SEMI-CONDUCTEUR À LIMITATION DE COURANT DE SATURATION
Applicants **
ROBERT BOSCH GMBH
Inventors
BARINGHAUS, Jens
Priority Data
102024211171.6
21.11.2024
DE
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1882 | |
| EPO | Filing, Examination, Granting | 8107 | |
| Japan | Filing, Examination, Granting | 2000 | |
| South Korea | Filing, Examination, Granting | 1754 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,483
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Abstract[German]
Halbleiterbauelement (100), insbesondere vertikales Transistorbauelement, vor- zugsweise auf Basis von Galliumnitrid, wobei das Halbleiterbauelement zur Stromführung auf Basis von 2-dimensionalen Elektronengas (2DEG) ausgebildet ist.[English]
Semiconductor component (100), in particular a vertical transistor component, preferably based on gallium nitride, wherein the semiconductor component is configured for current conduction on the basis of two-dimensional electron gas (2DEG).[French]
L'invention concerne un composant semi-conducteur (100), en particulier un composant de transistor vertical, de préférence à base de nitrure de gallium, le composant semi-conducteur étant configuré pour une conduction de courant sur la base d'un gaz d'électrons bidimensionnel (2DEG).