WO2026109404 - SEMICONDUCTOR STRUCTURES
National phase entry is expected:
Publication Number
WO/2026/109404
Publication Date
28.05.2026
International Application No.
PCT/EP2025/082968
International Filing Date
13.11.2025
Title **
[English]
SEMICONDUCTOR STRUCTURES
[French]
STRUCTURES SEMI-CONDUCTRICES
Applicants **
IQE PLC
Inventors
LABOUTIN, Oleg
ENGEL, Zachary
KAO, Chen-Kai
MARCHAND, Hugues
Priority Data
2416970.8
19.11.2024
GB
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2148 | |
| EPO | Filing, Examination, Granting | 10154 | |
| Japan | Filing, Examination, Granting | 2276 | |
| South Korea | Filing, Examination, Granting | 2322 | |
| USA | Filing, Examination, Granting | 5340 |
Total:
22,240
Contact Us
Abstract[English]
The present disclosure relates to a semiconductor structure comprising: a first semiconductor layer; a second semiconductor layer; and an interlayer region between the first semiconductor layer and the second semiconductor layer. The interlayer region comprises a bond energy higher than the first semiconductor layer and the second semiconductor layer.[French]
La présente divulgation concerne une structure semi-conductrice comprenant : une première couche semi-conductrice ; une seconde couche semi-conductrice ; et une région intercalaire entre la première couche semi-conductrice et la seconde couche semi-conductrice. La région intercalaire comprend une énergie de liaison supérieure à la première couche semi-conductrice et à la seconde couche semi-conductrice.