WO2026109287 - HALBLEITERBAUELEMENT MIT SICHERUNGSSTRUKTUR
National phase entry is expected:
Publication Number
WO/2026/109287
Publication Date
28.05.2026
International Application No.
PCT/EP2025/081649
International Filing Date
03.11.2025
Title **
[German]
HALBLEITERBAUELEMENT MIT SICHERUNGSSTRUKTUR
[English]
SEMICONDUCTOR COMPONENT WITH FUSE STRUCTURE
[French]
COMPOSANT SEMI-CONDUCTEUR AVEC STRUCTURE DE FUSIBLE
Applicants **
ROBERT BOSCH GMBH
Inventors
HANSEN, Uwe
Priority Data
102024211170.8
21.11.2024
DE
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1880 | |
| EPO | Filing, Examination, Granting | 8126 | |
| Japan | Filing, Examination, Granting | 2001 | |
| South Korea | Filing, Examination, Granting | 1757 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,504
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Abstract[German]
Halbleiterbauelement (100), insbesondere für ein Leistungselektronikmodul oder einen Wechselrichter, aufweisend einen Halbleiter (10), insbesondere einen vertikalen Transistor, vorzugsweise einen MOSFET oder IGBT, wobei der Halbleiter (10) zum vertikalen Stromfluss (A) von einer Vorderseite (10a) zu einer Rückseite (10b) des Halbleiters (10) ausgebildet ist, aufweisend eine Sicherungsstruktur (20).[English]
Semiconductor component (100), in particular for a power electronics module or an inverter, comprising a semiconductor (10), in particular a vertical transistor, preferably a MOSFET or IGBT, wherein the semiconductor (10) is configured for vertical current flow (A) from a front side (10a) to a rear side (10b) of the semiconductor (10), wherein the semiconductor component comprises a fuse structure (20).[French]
L'invention concerne un composant semi-conducteur (100), en particulier pour un module électronique de puissance ou un onduleur, comprenant un semi-conducteur (10), en particulier un transistor vertical, de préférence un MOSFET ou un IGBT, le semi-conducteur (10) étant configuré pour un flux de courant vertical (A) d'un côté avant (10a) à un côté arrière (10b) du semi-conducteur (10), le composant semi-conducteur comprenant une structure de fusible (20).