WO2026052466 - VERFAHREN ZUR HERSTELLUNG EINER MIKROELEKTROMECHANISCHEN (MEMS-) SCHICHTSTRUKTUR
National phase entry is expected:
Publication Number
WO/2026/052466
Publication Date
12.03.2026
International Application No.
PCT/EP2025/074329
International Filing Date
27.08.2025
Title **
[German]
VERFAHREN ZUR HERSTELLUNG EINER MIKROELEKTROMECHANISCHEN (MEMS-) SCHICHTSTRUKTUR
[English]
METHOD FOR PRODUCING A MICROELECTROMECHANICAL (MEMS) LAYER STRUCTURE
[French]
PROCÉDÉ DE FABRICATION D'UNE STRUCTURE DE COUCHE MICROÉLECTROMÉCANIQUE (MEMS)
Applicants **
ROBERT BOSCH GMBH
Inventors
CSEKE, Zsombor
REINMUTH, Jochen
MARTON, Marton
Priority Data
102024208421.2
05.09.2024
DE
Application details
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 3213 | |
| EPO | Filing, Examination, Granting | 33547 | |
| Japan | Filing, Examination, Granting | 3418 | |
| South Korea | Filing, Examination, Granting | 4634 | |
| USA | Filing, Examination, Granting | 13140 |
Total:
57,952
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Abstract[German]
Offenbart ist ein Verfahren zur Herstellung einer mikroelektromechanischen (MEMS-) Schichtstruktur, umfassend die folgenden Schritte: S1 - Abscheiden eines ersten Schichtaufbaus umfassend zumindest eine erste Lage eines ersten Halbleitermaterials auf einem Substrat; S2 - Abscheiden zumindest einer ersten Barriereschicht an dem ersten Schichtaufbau, wobei die erste Barriereschicht siliziumreiches Nitrid (SiRiN) umfasst.[English]
The invention relates to a method for producing a microelectromechanical (MEMS) layer structure, comprising the following steps: S1 - depositing a first layer arrangement comprising at least one first layer of a first semiconductor material on a substrate; S2 - depositing at least one first barrier layer on the first layer arrangement, the first barrier layer comprising silicon-rich nitride (SRN).[French]
L'invention concerne un procédé de réalisation d'une structure de couche microélectromécanique (MEMS), comprenant les étapes suivantes : S1 - déposer un premier agencement de couches comprenant au moins une première couche d'un premier matériau semi-conducteur sur un substrat ; S2 - déposer au moins une première couche barrière sur le premier agencement de couches, la première couche barrière comprenant du nitrure riche en silicium (SRN).