WO2026002829 - METHOD AND SYSTEM FOR EVALUATING THE QUALITY OF A PHOTOLITHOGRAPHY MASK

National phase entry is expected:
Publication Number WO/2026/002829
Publication Date 02.01.2026
International Application No. PCT/EP2025/067461
International Filing Date 22.06.2025
Title **
[English] METHOD AND SYSTEM FOR EVALUATING THE QUALITY OF A PHOTOLITHOGRAPHY MASK
[French] PROCÉDÉ ET SYSTÈME D'ÉVALUATION DE QUALITÉ DE MASQUE DE PHOTOLITHOGRAPHIE
Applicants **
CARL ZEISS SMT GMBH
Inventors
VAN DRIEL, Martin
GEORG, Niklas
Priority Data
102024118195.8   27.06.2024   DE
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Quotation for National Phase entry

Country StagesTotal
China Filing, Examination, Granting2813
EPO Filing, Examination, Granting15966
Japan Filing, Examination, Granting2525
South Korea Filing, Examination, Granting2825
USA Filing, Examination, Granting6140
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Total: 30,269
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Abstract[English] The invention relates to a method for emulating an aerial image (40) of a photolithography mask obtained by a photolithography system, the method comprising: a) obtaining one or more parameters (q) describing the photolithography process in the photolithography system; b) acquiring an aerial image (24) of the photolithography mask using an inspection system; c) obtaining an underlying design (20) of the photolithography mask; d) generating a plausible design (38) of the acquired aerial image (24) using the underlying design (20) by solving an optimization problem; and e) emulating an aerial image (40) of the photolithography mask using the plausible design (38) and the one or more parameters (q) describing the photolithography process. The invention also relates to a method for evaluating the quality of a photolithography mask and a corresponding system.[French] L'invention concerne un procédé destiné à émuler une image aérienne (40) d'un masque de photolithographie obtenu par un système de photolithographie, le procédé consistant à : a) obtenir un ou plusieurs paramètres (q) décrivant le processus de photolithographie dans le système de photolithographie ; b) acquérir une image aérienne (24) du masque de photolithographie à l'aide d'un système d'inspection ; c) obtenir une conception sous-jacente (20) du masque de photolithographie ; d) utiliser la conception sous-jacente (20) pour générer une conception plausible (38) de l'image aérienne (24) acquise en résolvant un problème d'optimisation ; et e) émuler une image aérienne (40) du masque de photolithographie à l'aide de la conception plausible (38) et du ou des paramètres (q) décrivant le processus de photolithographie. L'invention concerne également un procédé d'évaluation de la qualité d'un masque de photolithographie et un système correspondant.