WO2024260593 - A SEMICONDUCTOR STRUCTURE
National phase entry is expected:
Publication Number
WO/2024/260593
Publication Date
26.12.2024
International Application No.
PCT/EP2024/056803
International Filing Date
14.03.2024
Title **
[English]
A SEMICONDUCTOR STRUCTURE
[French]
STRUCTURE SEMI-CONDUCTRICE
Applicants **
IQE PLC
Pascal Close
St Mellons
Cardiff CF3 0LW, GB
Inventors
DARGIS, Rytis
c/o IQE plc
Pascal Close
St Mellons
Cardiff
Gwent CF3 0LW, GB
CLARK, Andrew
c/o IQE plc
Pascal Close
St Mellons, St Mellons
Cardiff
Gwent CF3 0LW, GB
Priority Data
2309447.7
22.06.2023
GB
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| * | |
International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1551 | |
| EPO | Filing, Examination | 10346 | |
| Japan | Filing | 529 | |
| South Korea | Filing | 575 | |
| USA | Filing, Examination | 5035 |
Total: 18036 USD
Abstract[English]
An epitaxial semiconductor structure comprising a silicon substrate in <100> orientation. On the substrate are sequentially a bixbyite oxide layer in <111> orientation, a rare earth nitride layer, an aluminium nitride layer, and a gallium nitride layer in <0001> orientation. Advantageously the semiconductor structure results in a better quality GaN layer.[French]
L'invention concerne une structure semi-conductrice épitaxiale comprenant un substrat de silicium dans une orientation <100>. Sur le substrat sont séquentiellement présentes une couche d'oxyde de bixbyite dans une orientation <111>, une couche de nitrure de terre rare, une couche de nitrure d'aluminium et une couche de nitrure de gallium dans une orientation <0001>. Avantageusement, la structure semi-conductrice permet d'obtenir une couche de GaN de meilleure qualité.