WO2023203035 - SYSTEM AND METHOD FOR PROCESSING SILICON WAFERS
National phase entry:
Publication Number
WO/2023/203035
Publication Date
26.10.2023
International Application No.
PCT/EP2023/060035
International Filing Date
18.04.2023
Title **
[English]
SYSTEM AND METHOD FOR PROCESSING SILICON WAFERS
[French]
SYSTÈME ET PROCÉDÉ DE TRAITEMENT DE TRANCHES DE SILICIUM
Applicants **
SILTRONIC AG
Inventors
ISTRATOV, Andrei
WU, Tom
ZAHNWEH, Katharina
Priority Data
17/724,503
20.04.2022
US
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2140 | |
| EPO | Filing, Examination, Granting | 10154 | |
| Japan | Filing, Examination, Granting | 2276 | |
| South Korea | Filing, Examination, Granting | 2322 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
21,632
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A method for processing a silicon wafer, the method including cutting an ingot to form a wafer, extracting from measured shape data a cross-sectional profile, the cross-sectional profile passing through the center of the wafer and being aligned with a cutting direction of an ingot, interpolating the shape data with a fixed and pre-determined step size, fitting a first second-degree polynomial to the cross-sectional profile, determining a residual profile by subtracting the polynomial from the cross-sectional profile, fitting a second second-degree polynomial to the residual profile using a sliding window of pre-determined width to determine a position, height, and curvature of each peak and valley of the residual profile, determining a waviness parameter based on the position, height, and curvature of each peak and valley of the residual profile, and further processing the wafer based on the waviness parameter and a predetermined waviness threshold.[French]
L'invention concerne un procédé de traitement d'une tranche de silicium, comprenant la découpe d'un lingot pour former une tranche, l'extraction à partir de données de forme mesurée d'un profil transversal, le profil transversal passant par le centre de la tranche et étant aligné avec la direction de découpe du lingot, l'interpolation des données de forme avec une taille de pas fixe et prédéterminée, l'ajustement d'un premier polynôme du second degré au profil transversal, la détermination d'un profil résiduel en soustrayant le polynôme du profil transversal, l'ajustement d'un polynôme du second degré au profil résiduel à l'aide d'une fenêtre coulissante d'une largeur prédéterminée pour déterminer la position, la hauteur et la courbure de chaque pic et vallée du profil résiduel, la détermination d'un paramètre d'ondulation basé sur la position, la hauteur et la courbure de chaque pic et vallée du profil résiduel, et la poursuite du traitement de la tranche en fonction du paramètre d'ondulation et d'un seuil d'ondulation prédéterminé.