WO2023202936 - METHOD FOR MANUFACTURING SILICON NITROGENOUS FILM ON SUBSTRATE HAVING A GROOVE
National phase entry:
Publication Number
WO/2023/202936
Publication Date
26.10.2023
International Application No.
PCT/EP2023/059604
International Filing Date
13.04.2023
Title **
[English]
METHOD FOR MANUFACTURING SILICON NITROGENOUS FILM ON SUBSTRATE HAVING A GROOVE
[French]
PROCÉDÉ DE FABRICATION D'UN FILM AZOTÉ DE SILICIUM SUR UN SUBSTRAT À RAINURE
Applicants **
MERCK PATENT GMBH
Frankfurter Strasse 250
64293 Darmstadt, DE
Inventors
SAKURAI, Issei
c/o Merck Electronics Ltd.
3330 Chihama
Kakegawa-shi
SHIZUOKA 437-1412, JP
Priority Data
2022-068464
18.04.2022
JP
Application details
| Total Number of Claims/PCT | * |
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| Pages for Publication | * |
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International Searching Authority |
EPO
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 990 | |
| EPO | Filing, Examination | 4575 | |
| Japan | Filing | 587 | |
| South Korea | Filing | 574 | |
| USA | Filing, Examination | 2710 |
Total: 9436 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A method for manufacturing a silicon nitrogenous film on a substrate having a groove comprising the following steps: (a) applying a silicon nitrogenous composition on a substrate having a groove to form a composition layer; (b) irradiating the composition layer with light having a wavelength of 200 to 229 nm; and (c) heating the substrate in a non-oxidizing atmosphere, wherein the refractive index of the silicon nitrogenous film is 1.70 to 2.40 for the light having a wavelength of 633 nm.[French]
Procédé de fabrication d'un film azoté de silicium sur un substrat à rainure comprenant les étapes suivantes consistant à : (a) appliquer une composition azotée de silicium sur un substrat à rainure pour former une couche de composition ; (b) exposer la couche de composition à une lumière ayant une longueur d'onde située dans la plage allant de 200 à 229 nm ; et (c) chauffer le substrat dans une atmosphère non oxydante, l'indice de réfraction du film azoté de silicium étant de 1,70 à 2,40 pour la lumière ayant une longueur d'onde de 633 nm.