WO2023174896 - ELECTRONIC SWITCHING DEVICE
National phase entry:
Publication Number
WO/2023/174896
Publication Date
21.09.2023
International Application No.
PCT/EP2023/056396
International Filing Date
14.03.2023
Title **
[English]
ELECTRONIC SWITCHING DEVICE
[French]
DISPOSITIF DE COMMUTATION ÉLECTRONIQUE
Applicants **
MERCK PATENT GMBH
Frankfurter Strasse 250
64293 Darmstadt, DE
Inventors
KIRSCH, Peer
c/o Merck Electronics KGaA
Frankfurter Strasse 250
64293 DARMSTADT, DE
SEIM, Henning
c/o Merck Electronics KGaA
Frankfurter Strasse 250
64293 DARMSTADT, DE
VOGES, Frank
c/o Merck Electronics KGaA
Frankfurter Strasse 250
64293 DARMSTADT, DE
Priority Data
22162371.3
16.03.2022
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Translation |
|
Recalculate
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1300 | |
| EPO | Filing, Examination | 5598 | |
| Japan | Filing | 589 | |
| South Korea | Filing | 575 | |
| USA | Filing, Examination | 2710 |
Total: 10772 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
The present invention relates to an electronic switching device, in particular to tunnel junctions, comprising an organic molecular layer for use in memory, sensors, field- effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). Another aspect of the invention relates to a compound of formula (I) in which the occurring groups have the meanings defined in claim 1, for use in the molecular layer. The invention further relates to the use of said molecular layer and to processes for the production and operation of the electronic switching element and components based thereon.[French]
La présente invention concerne un dispositif de commutation électronique, en particulier des jonctions tunnel, comprenant une couche moléculaire organique destinée à être utilisée dans une mémoire, des capteurs, des transistors à effet de champ ou des jonctions Josephson. Plus particulièrement, l'invention relève du domaine des mémoires memristives non volatiles à accès aléatoire (RRAM). Un autre aspect de l'invention concerne un composé de formule (I) dans laquelle les groupes apparaissant ont les significations définies dans la revendication 1, destiné à être utilisé dans la couche moléculaire. L'invention concerne en outre l'utilisation de ladite couche moléculaire et des procédés pour la production et le fonctionnement de l'élément de commutation électronique et des composants à base de celui-ci.