WO2023165914 - ION IMPLANTATION THICK FILM RESIST COMPOSITION, METHOD FOR MANUFACTURING PROCESSED SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING DEVICE USING THE SAME

National phase entry:
Publication Number WO/2023/165914
Publication Date 07.09.2023
International Application No. PCT/EP2023/054781
International Filing Date 27.02.2023
Title **
[English] ION IMPLANTATION THICK FILM RESIST COMPOSITION, METHOD FOR MANUFACTURING PROCESSED SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING DEVICE USING THE SAME
[French] COMPOSITION DE RÉSERVE DE FILM ÉPAIS POUR IMPLANTATION IONIQUE, PROCÉDÉ DE FABRICATION DE SUBSTRAT TRAITÉ L'UTILISANT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF L'UTILISANT
Applicants **
MERCK PATENT GMBH Frankfurter Strasse 250 64293 Darmstadt, DE
Inventors
TAKAICHI, Tetsumasa c/o Merck Electornics Ltd.[JP] 3330 Chihama, Kakegawa-shi SHIZUOKA 437-1412, JP
YANAGITA, Hiroshi c/o Merck Electornics Ltd.[JP] 3330 Chihama, Kakegawa-shi SHIZUOKA 437-1412, JP
SUZUKI, Masato c/o Merck Electornics Ltd.[JP] 3330 Chihama, Kakegawa-shi SHIZUOKA 437-1412, JP
Priority Data
2022-031158   01.03.2022   JP
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Quotation for National Phase entry

Country StagesTotal
China Filing1264
EPO Filing, Examination5310
Japan Filing594
South Korea Filing575
USA Filing, Examination2710
MasterCard Visa

Total: 10453

The term for entry into the National Phase has expired. This quotation is for informational purposes only

Abstract[English] [Problem] An ion implantation thick film resist composition is provided. [Means for Solution] An ion implantation thick film resist composition comprising a polymer (A) having a certain structure, a photoacid generator (B) and a solvent (C), wherein the film thickness of the resist film formed from the composition is 1.0 to 50 μm; and the mass average molecular weight of the polymer (A) is 5,000 to 19,000.[French] Le problème décrit par la présente invention est de fournir une composition de réserve de film épais pour implantation ionique. La solution selon l'invention porte sur une composition de réserve de film épais pour implantation ionique comprenant un polymère (A) ayant une certaine structure, un générateur de photoacide (B) et un solvant (C), l'épaisseur de film du film de réserve formé à partir de la composition étant de 1,0 à 50 µm, et le poids moléculaire moyen en masse du polymère (A) étant de 5 000 à 19 000.
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