WO2023165914 - ION IMPLANTATION THICK FILM RESIST COMPOSITION, METHOD FOR MANUFACTURING PROCESSED SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING DEVICE USING THE SAME
National phase entry:
Publication Number
WO/2023/165914
Publication Date
07.09.2023
International Application No.
PCT/EP2023/054781
International Filing Date
27.02.2023
Title **
[English]
ION IMPLANTATION THICK FILM RESIST COMPOSITION, METHOD FOR MANUFACTURING PROCESSED SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING DEVICE USING THE SAME
[French]
COMPOSITION DE RÉSERVE DE FILM ÉPAIS POUR IMPLANTATION IONIQUE, PROCÉDÉ DE FABRICATION DE SUBSTRAT TRAITÉ L'UTILISANT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF L'UTILISANT
Applicants **
MERCK PATENT GMBH
Frankfurter Strasse 250
64293 Darmstadt, DE
Inventors
TAKAICHI, Tetsumasa
c/o Merck Electornics Ltd.[JP]
3330 Chihama, Kakegawa-shi
SHIZUOKA 437-1412, JP
YANAGITA, Hiroshi
c/o Merck Electornics Ltd.[JP]
3330 Chihama, Kakegawa-shi
SHIZUOKA 437-1412, JP
SUZUKI, Masato
c/o Merck Electornics Ltd.[JP]
3330 Chihama, Kakegawa-shi
SHIZUOKA 437-1412, JP
Priority Data
2022-031158
01.03.2022
JP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
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| Number of Drawings | * |
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| Number of Pages with Drawings | * |
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International Searching Authority |
EPO
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1264 | |
| EPO | Filing, Examination | 5310 | |
| Japan | Filing | 594 | |
| South Korea | Filing | 575 | |
| USA | Filing, Examination | 2710 |

Total: 10453 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
[Problem] An ion implantation thick film resist composition is provided. [Means for Solution] An ion implantation thick film resist composition comprising a polymer (A) having a certain structure, a photoacid generator (B) and a solvent (C), wherein the film thickness of the resist film formed from the composition is 1.0 to 50 μm; and the mass average molecular weight of the polymer (A) is 5,000 to 19,000.[French]
Le problème décrit par la présente invention est de fournir une composition de réserve de film épais pour implantation ionique. La solution selon l'invention porte sur une composition de réserve de film épais pour implantation ionique comprenant un polymère (A) ayant une certaine structure, un générateur de photoacide (B) et un solvant (C), l'épaisseur de film du film de réserve formé à partir de la composition étant de 1,0 à 50 µm, et le poids moléculaire moyen en masse du polymère (A) étant de 5 000 à 19 000.