WO2023156419 - POSITIVE TYPE LIFT-OFF RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME

National phase entry:
Publication Number WO/2023/156419
Publication Date 24.08.2023
International Application No. PCT/EP2023/053692
International Filing Date 15.02.2023
Title **
[English] POSITIVE TYPE LIFT-OFF RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME
[French] COMPOSITION DE RÉSERVE À DÉCOLLEMENT DE TYPE POSITIF ET PROCÉDÉ DE FABRICATION DE MOTIF DE RÉSERVE L'UTILISANT
Applicants **
MERCK PATENT GMBH Frankfurter Strasse 250 64293 Darmstadt, DE
Inventors
YANO, Tomotsugu c/o Merck Elelectronics Ltd. Arco Tower 4F, 1-8-1 Shimomeguro 1-chome Meguro-ku TOKYO 153-8927, JP
HAMA, Yusuke c/o Merck Elelectronics Ltd. Arco Tower 4F, 1-8-1 Shimomeguro 1-chome Meguro-ku TOKYO 153-8927, JP
HITOKAWA, Hiroshi c/o Merck Elelectronics Ltd. Arco Tower 4F, 1-8-1 Shimomeguro 1-chome Meguro-ku TOKYO 153-8927, JP
Priority Data
2022-024091   18.02.2022   JP
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Quotation for National Phase entry

Country StagesTotal
China Filing1446
EPO Filing, Examination6563
Japan Filing594
South Korea Filing575
USA Filing, Examination2710
MasterCard Visa

Total: 11888

The term for entry into the National Phase has expired. This quotation is for informational purposes only

Abstract[English] [Problem] A positive type lift-off resist composition is provided. [Means for Solution] A positive type lift-off resist composition comprising a polymer (A) having a certain structure and cLogP of 2.76 to 3.35, a photoacid generator (B) and a solvent (C).[French] La présente invention a pour objet de fournir une composition de réserve à décollement de type positif. À cet effet, l'invention concerne une composition de réserve à décollement de type positif comprenant un polymère (A) ayant une certaine structure et cLogP de 2,76 à 3,35, un générateur de photoacide (B) et un solvant (C).
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