WO2023156265 - A HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
National phase entry:
Publication Number
WO/2023/156265
Publication Date
24.08.2023
International Application No.
PCT/EP2023/053061
International Filing Date
08.02.2023
Title **
[English]
A HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
[French]
TRANCHE HÉTÉROÉPITAXIALE POUR LE DÉPÔT DE NITRURE DE GALLIUM
Applicants **
SILTRONIC AG
Inventors
MURPHY, Brian
THAPA, Sarad Bahadur
Priority Data
22156958.5
16.02.2022
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1875 | |
| EPO | Filing, Examination, Granting | 8097 | |
| Japan | Filing, Examination, Granting | 1992 | |
| South Korea | Filing, Examination, Granting | 1656 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,360
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A heteroepitaxial wafer comprising in the following order (1) a substrate made of Silicon having a thickness a diameter and a resistivity, comprising a buried gettering layer for Hydrogen, (2) a 3C-SiC layer, (3) an Aluminum-Nitride nucleation layer, comprising in the given order a first nitrogen enriched Aluminum-Nitride region, an Aluminum-Nitride region and a second nitrogen enriched Aluminum-Nitride region.[French]
Tranche hétéroépitaxiale comprenant dans l'ordre suivant (1) un substrat en silicium ayant une épaisseur d'un diamètre et une résistivité, comprenant une couche de piégeage enterrée pour l'hydrogène, (2) une couche de 3C-SiC, (3) une couche de nucléation de nitrure d'aluminium, comprenant dans l'ordre donné une première région de nitrure d'aluminium enrichie en azote, une région de nitrure d'aluminium et une seconde région de nitrure d'aluminium enrichie en azote.