WO2023156265 - A HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
National phase entry:
Publication Number
WO/2023/156265
Publication Date
24.08.2023
International Application No.
PCT/EP2023/053061
International Filing Date
08.02.2023
Title **
[English]
A HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
[French]
TRANCHE HÉTÉROÉPITAXIALE POUR LE DÉPÔT DE NITRURE DE GALLIUM
Applicants **
SILTRONIC AG
Einsteinstr. 172 Tower B / Blue Tower
81677 München, DE
Inventors
MURPHY, Brian
Berg bei Wühr 2
84347 Pfarrkirchen, DE
THAPA, Sarad Bahadur
Brahmsstr. 11
84489 Burghausen, DE
Priority Data
22156958.5
16.02.2022
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Translation |
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Recalculate
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 961 | |
| EPO | Filing, Examination | 4636 | |
| Japan | Filing | 595 | |
| South Korea | Filing | 574 | |
| USA | Filing, Examination | 2710 |
Total: 9476 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A heteroepitaxial wafer comprising in the following order (1) a substrate made of Silicon having a thickness a diameter and a resistivity, comprising a buried gettering layer for Hydrogen, (2) a 3C-SiC layer, (3) an Aluminum-Nitride nucleation layer, comprising in the given order a first nitrogen enriched Aluminum-Nitride region, an Aluminum-Nitride region and a second nitrogen enriched Aluminum-Nitride region.[French]
Tranche hétéroépitaxiale comprenant dans l'ordre suivant (1) un substrat en silicium ayant une épaisseur d'un diamètre et une résistivité, comprenant une couche de piégeage enterrée pour l'hydrogène, (2) une couche de 3C-SiC, (3) une couche de nucléation de nitrure d'aluminium, comprenant dans l'ordre donné une première région de nitrure d'aluminium enrichie en azote, une région de nitrure d'aluminium et une seconde région de nitrure d'aluminium enrichie en azote.