WO2023151992 - ETCHING COMPOSITION AND METHOD FOR ETCHING AT LEAST ONE SURFACE OF A SULFUR-CONTAINING THERMOPLASTIC RESIN-SUBSTRATE
National phase entry:
Publication Number
WO/2023/151992
Publication Date
17.08.2023
International Application No.
PCT/EP2023/052361
International Filing Date
31.01.2023
Title **
[English]
ETCHING COMPOSITION AND METHOD FOR ETCHING AT LEAST ONE SURFACE OF A SULFUR-CONTAINING THERMOPLASTIC RESIN-SUBSTRATE
[French]
COMPOSITION DE GRAVURE ET PROCÉDÉ DE GRAVURE D'AU MOINS UNE SURFACE D'UN SUBSTRAT EN RÉSINE THERMOPLASTIQUE CONTENANT DU SOUFRE
Applicants **
ATOTECH DEUTSCHLAND GMBH & CO. KG
Erasmusstraße 20
10553 Berlin, DE
Inventors
BAYER, Frank
c/o Atotech Deutschland GmbH & Co. KG
Intellectual Property
Erasmusstraße 20
10553 Berlin, DE
KARAGÖL, Serdar Turan
c/o Atotech Deutschland GmbH & Co. KG
Intellectual Property
Erasmusstraße 20
10553 Berlin, DE
Priority Data
22155710.1
08.02.2022
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1058 | |
| EPO | Filing, Examination | 4601 | |
| Japan | Filing | 591 | |
| South Korea | Filing | 575 | |
| USA | Filing, Examination | 2710 |

Total: 9535 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
The present invention relates to a method for etching at least one surface of a sulfur-containing thermoplastic resin-substrate, the method comprising the steps (A) to (C), wherein step (C) is an etching step including a contacting with a liquid etching composition. The liquid etching composition comprises (a) a mineral acid selected from the group consisting of sulfuric acid and nitric acid, and (b) a dialkyl sulfoxide and/or a phenyl-comprising sulfoxide.[French]
La présente invention concerne un procédé de gravure d'au moins une surface d'un substrat en résine thermoplastique contenant du soufre, le procédé comprenant les étapes (A) à (C), l'étape (C) étant une étape de gravure comprenant une mise en contact avec une composition de gravure liquide. La composition de gravure liquide comprend (a) un acide minéral choisi dans le groupe constitué par l'acide sulfurique et l'acide nitrique, et (b) un sulfoxyde de dialkyle et/ou un sulfoxyde comprenant du phényle.