WO2023099378 - SILICON-CONTAINING FILM FORMING COMPOSITION AND METHOD FOR MANUFACTURING SILICON-CONTAINING FILM USING THE SAME
National phase entry:
Publication Number
WO/2023/099378
Publication Date
08.06.2023
International Application No.
PCT/EP2022/083415
International Filing Date
28.11.2022
Title **
[English]
SILICON-CONTAINING FILM FORMING COMPOSITION AND METHOD FOR MANUFACTURING SILICON-CONTAINING FILM USING THE SAME
[French]
COMPOSITION DE FORMATION DE FILM CONTENANT DU SILICIUM ET PROCÉDÉ DE FABRICATION D'UN FILM CONTENANT DU SILICIUM L'UTILISANT
Applicants **
MERCK PATENT GMBH
Inventors
NAKAMOTO, Naoko
TAKAGISHI, Hideyuki
FUJIWARA, Takashi
SATO, Atsuhiko
Priority Data
2021-194812
30.11.2021
JP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2142 | |
| EPO | Filing, Examination, Granting | 10146 | |
| Japan | Filing, Examination, Granting | 2277 | |
| South Korea | Filing, Examination, Granting | 2318 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
21,623
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Contact Us
Abstract[English]
[Problem] Providing a silicon-containing film forming composition having a high affinity for a substrate. [Means for Solution] A silicon-containing film forming composition comprising (I) a polymer having a polysilane skeleton comprising a particular repeating unit, (II) a silicon compound having an unsaturated hydrocarbon bond, and (III) a solvent.[French]
Le problème décrit par la présente invention est de fournir une composition de formation de film contenant du silicium ayant une affinité élevée pour un substrat. La solution selon l'invention porte sur une composition de formation de film contenant du silicium comprenant (I) un polymère ayant un squelette polysilane comprenant une unité répétitive particulière, (II) un composé de silicium ayant une liaison hydrocarbure insaturée, et (III) un solvant.