WO2023046762 - OPTOELECTRONIC DEVICE
National phase entry is expected:
Publication Number
WO/2023/046762
Publication Date
30.03.2023
International Application No.
PCT/EP2022/076242
International Filing Date
21.09.2022
Title **
[English]
OPTOELECTRONIC DEVICE
[French]
DISPOSITIF OPTOÉLECTRONIQUE
Applicants **
ROCKLEY PHOTONICS LIMITED
1 Ashley Road
3rd Floor
Altrincham Cheshire WA14 2DT, GB
Inventors
GUOMIN, Yu
c/o Rockley Photonics, Inc.,
234 East Colorado Boulevard
Suite 600
Pasadena, California 91101, US
ZILKIE, Aaron John
c/o Rockley Photonics, Inc.,
234 East Colorado Boulevard
Suite 600
Pasadena, California 91101, US
RICKMAN, Andrew George
c/o Rockley Photonics Limited
3rd Floor
1 Ashley Road
Altrincham Cheshire WA14 2DT, GB
Priority Data
63/247,297
22.09.2021
US
17/848,328
23.06.2022
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1610 | |
| EPO | Filing, Examination | 7598 | |
| Japan | Filing | 596 | |
| South Korea | Filing | 608 | |
| USA | Filing, Examination | 3110 |
Total: 13522 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a lll-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the lll-V semiconductor-based optoelectronic component.[French]
L'invention concerne un dispositif optoélectronique. Le dispositif optoélectronique comprend : une plate-forme en silicium, comprenant un guide d'ondes en silicium et une cavité, un lit de la cavité étant prévu au moins en partie par une couche d'oxyde enterrée; un composant optoélectronique à base de semi-conducteurs III-V, lié à un lit de la cavité de la plate-forme de silicium; et un guide d'ondes en pont, situé entre le guide d'ondes en silicium et le composant optoélectronique à base de semi-conducteurs III-V.