WO2023006706 - SILICON-CONTAINING FILM FORMING COMPOSITION AND METHOD FOR MANUFACTURING SILICON-CONTAINING FILM USING THE SAME
National phase entry:
Publication Number
WO/2023/006706
Publication Date
02.02.2023
International Application No.
PCT/EP2022/070869
International Filing Date
26.07.2022
Title **
[English]
SILICON-CONTAINING FILM FORMING COMPOSITION AND METHOD FOR MANUFACTURING SILICON-CONTAINING FILM USING THE SAME
[French]
COMPOSITION DE FORMATION DE FILM CONTENANT DU SILICIUM ET PROCÉDÉ DE PRODUCTION D'UN FILM CONTENANT DU SILICIUM L'UTILISANT
Applicants **
MERCK PATENT GMBH
Frankfurter Strasse 250
64293 Darmstadt, DE
Inventors
NAKAMOTO, Naoko
c/o Merck Electronics Ltd.
3330 Chihama
Kakegawa-shi
SHIZUOKA, 437-1412, JP
TAKAGISHI, Hideyuki
c/o Merck Electronics Ltd.
3330 Chihama
Kakegawa-shi
SHIZUOKA, 437-1412, JP
FUJIWARA, Takashi
c/o Merck Electronics Ltd.
3330 Chihama
Kakegawa-shi
SHIZUOKA, 437-1412, JP
SATO, Atsuhiko
c/o Merck Electronics Ltd.
3330 Chihama
Kakegawa-shi
SHIZUOKA, 437-1412, JP
Priority Data
2021-124386
29.07.2021
JP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
EPO
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1171 | |
| EPO | Filing, Examination | 5289 | |
| Japan | Filing | 589 | |
| South Korea | Filing | 575 | |
| USA | Filing, Examination | 2710 |
Total: 10334 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
[Problem] According to the present invention, a silicon- containing film forming composition having a high affinity for a substrate can be provided. [Means for Solution] A silicon-containing film forming composition comprising (I) a polymer having a polysilane skeleton comprising a particular repeating unit, (II) a carbodiimide compound having a particular structure, and (III) a solvent.[French]
Le problème décrit par la présente invention est de fournir une composition de formation de film contenant du silicium ayant une affinité élevée pour un substrat. La solution de l'invention porte sur une composition de formation de film contenant du silicium comprenant (I) un polymère ayant un squelette polysilane comprenant une unité répétitive particulière, (II) un composé carbodiimide ayant une structure particulière, et (III) un solvant.