WO2022184630 - COMPOUND SEMICONDUCTOR LAYERED STRUCTURE AND PROCESS FOR PREPARING THE SAME
National phase entry:
Publication Number
WO/2022/184630
Publication Date
09.09.2022
International Application No.
PCT/EP2022/054964
International Filing Date
28.02.2022
Title **
[English]
COMPOUND SEMICONDUCTOR LAYERED STRUCTURE AND PROCESS FOR PREPARING THE SAME
[French]
STRUCTURE STRATIFIÉE DE SEMI-CONDUCTEUR COMPOSÉ ET SON PROCÉDÉ DE PRÉPARATION
Applicants **
UMICORE
Rue du Marais 31
1000 Brussels, BE
Inventors
LEITGEB, Markus
Technische Universität Wien
Karlsplatz 13
1040 Vienna, AT
DEPUYDT, Ben
UMICORE
Rue du Marais 31
1000 Brussels, BE
PFUSTERSCHMIED, Georg
Technische Universität Wien
Karlsplatz 13
1040 Vienna, AT
SCHMID, Ulrich
Technische Universität Wien
Karlsplatz 13
1040 Vienna, AT
Priority Data
21159944.4
01.03.2021
EP
21171992.7
04.05.2021
EP
21209102.9
18.11.2021
EP
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
EPO
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Translation |
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Recalculate
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1208 | |
| EPO | Filing, Examination | 4635 | |
| Japan | Filing | 594 | |
| South Korea | Filing | 640 | |
| USA | Filing, Examination | 2710 |
Total: 9787 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
The present invention provides compound semiconductor layered structures comprising a semiconductor substrate having a bottom layer and a top layer; and a semi-conductor film on top of said semiconductor substrate, said semiconductor film comprising a bottom layer, a core and a top layer, whereby said bottom layer of said semiconductor film is in contact with said top surface of said semiconductor substrate, and wherein said top layer is nonporous. Preferred compound semiconductors further comprise a semiconductor overlayer having a bottom surface layer and a top surface layer, whereby said bottom surface layer of said second semiconductor layer is in contact with said top layer of said semiconductor film. The present invention also provides process for preparing the same.[French]
La présente invention concerne des structures stratifiées semi-conductrices composées comprenant un substrat semi-conducteur ayant une couche inférieure et une couche supérieure; et un film semi-conducteur sur le dessus dudit substrat semi-conducteur, ledit film semi-conducteur comprenant une couche inférieure, un noyau et une couche supérieure, ladite couche inférieure dudit film semi-conducteur étant en contact avec ladite surface supérieure dudit substrat semi-conducteur, et ladite couche supérieure étant non poreuse. Les semi-conducteurs composés préférés comprennent en outre une surcouche semi-conductrice ayant une couche de surface inférieure et une couche de surface supérieure, ladite couche de surface inférieure de ladite seconde couche semi-conductrice étant en contact avec ladite couche supérieure dudit film semi-conducteur. La présente invention porte également sur un procédé de préparation de ladite composition.