WO2025256364 - MEMORY
National phase entry:
Publication Number
WO/2025/256364
Publication Date
18.12.2025
International Application No.
PCT/CN2025/096161
International Filing Date
21.05.2025
Title **
[English]
MEMORY
[French]
MÉMOIRE
[Chinese]
存储器
Applicants **
CXMT CORPORATION
Inventors
SHANG, Weibing
WU, Xianjun
QIU, Anping
LU, Yaohua
LIU, Lu
XU, Jing
SHAO, Tong
Priority Data
202410753976.X
11.06.2024
CN
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1605 | |
| EPO | Filing, Examination, Granting | 11558 | |
| Japan | Filing, Examination, Granting | 2029 | |
| South Korea | Filing, Examination, Granting | 1870 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
21,802
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Abstract[English]
Embodiments of the present application provide a memory, which may at least comprise: a first memory area, a peripheral circuit area, and a second memory area arranged in a first direction, wherein the peripheral circuit area is located between the first memory area and the second memory area, the first memory area has a plurality of repeating units in a second direction, and each of the repeating units consists of at least two repositories arranged in the first direction, wherein the first direction is perpendicular to the second direction.[French]
Des modes de réalisation de la présente demande concernent une mémoire, qui peut au moins comprendre : une première zone de mémoire, une zone de circuit périphérique, et une seconde zone de mémoire agencées dans une première direction, la zone de circuit périphérique étant située entre la première zone de mémoire et la seconde zone de mémoire, la première zone de mémoire comportant une pluralité d'unités de répétition dans une seconde direction, et chacune des unités de répétition étant constituée d'au moins deux référentiels agencés dans la première direction, la première direction étant perpendiculaire à la seconde direction.[Chinese]
本申请实施例提供一种存储器，至少可以包括：沿第一方向排列的第一存储区、外围电路区和第二存储区，所述外围电路区位于所述第一存储区和所述第二存储区之间，所述第一存储区在第二方向上具有多个重复单元，每一所述重复单元由在所述第一方向上排列的至少两个存储库构成；其中，所述第一方向垂直于所述第二方向。