WO2026055838 - LIGHT-EMITTING DIODE AND LIGHT-EMITTING APPARATUS
National phase entry is expected:
Publication Number
WO/2026/055838
Publication Date
19.03.2026
International Application No.
PCT/CN2024/118171
International Filing Date
11.09.2024
Title **
[English]
LIGHT-EMITTING DIODE AND LIGHT-EMITTING APPARATUS
[French]
DIODE ÉLECTROLUMINESCENTE ET APPAREIL ÉLECTROLUMINESCENT
[Chinese]
发光二极管及发光装置
Applicants **
ANHUI SANAN OPTOELECTRONICS CO., LTD.
Inventors
WANG, Yu
MA, Mingbin
WANG, Yawei
TANG, Heng
LI, Jiaan
CHEN, Zhihao
LEE, Cheng-hung
LING, Chan-chan
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1734 | |
| EPO | Filing, Examination, Granting | 13088 | |
| Japan | Filing, Examination, Granting | 2246 | |
| South Korea | Filing, Examination, Granting | 2243 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
24,051
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Abstract[English]
. By means of improving a buffer layer, the present invention can enhance the current conduction performance of the buffer layer, thereby improving the electrostatic discharge resistance of the light-emitting diode; moreover, it can also be ensured that there is a certain defect density inside the buffer layer, which is conducive to the subsequent formation of V-pits, thereby improving the luminous efficiency of the light-emitting diode.[French]
. Au moyen de l'amélioration d'une couche tampon, la présente invention permet d'améliorer les performances de conduction de courant de la couche tampon, ce qui permet d'améliorer la résistance à la décharge électrostatique de la diode électroluminescente ; de plus, la présente invention permet également de garantir la présence d'une certaine densité de défauts à l'intérieur de la couche tampon, ce qui est favorable à la formation ultérieure de trous en V, ce qui permet d'améliorer l'efficacité lumineuse de la diode électroluminescente.[Chinese]
。本发明通过改进缓冲层，能提升缓冲层的电流导通性能，从而提升发光二极管的抗静电性能，同时，还能保障缓冲层内具有一定的缺陷密度，利于后续开辟V-pits，进而提升发光二极管的发光效率。