WO2025073074 - PILLAR TRENCH POWER MOSFET AND FORMING METHOD THEREOF
National phase entry is expected:
Publication Number
WO/2025/073074
Publication Date
10.04.2025
International Application No.
PCT/CN2023/123058
International Filing Date
01.10.2023
Title **
[English]
PILLAR TRENCH POWER MOSFET AND FORMING METHOD THEREOF
[French]
MOSFET DE PUISSANCE À TRANCHÉE DE PILIER ET SON PROCÉDÉ DE FORMATION
Applicants **
HUAWEI TECHNOLOGIES CO., LTD.
Inventors
CHANG, Mo Huai
HE, Junqing
HE, Linrong
ZHANG, Yuhua
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1643 | |
| EPO | Filing, Examination, Granting | 11543 | |
| Japan | Filing, Examination, Granting | 2179 | |
| South Korea | Filing, Examination, Granting | 1982 | |
| USA | Filing, Examination, Granting | 5340 |
Total:
22,687
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A MOSFET (100) comprises an active region (101) formed on a drift region (102), a gate trench (105) formed in the active region (101) extending into the drift region (102), wherein the gate trench (105) is filled with a gate electrode material (106), and a pillar trench (107) adjacent to the active region (101) extending deeper into the drift region (102) than the gate trench (105), wherein the pillar trench (107) is filled with a source electrode material (108) and the gate electrode material (106), the source electrode material (108) being surrounded by the gate electrode material (106).[French]
Un MOSFET (100) comprend une région active (101) formée sur une région de dérive (102), une tranchée de grille (105) formée dans la région active (101) s'étendant dans la région de dérive (102), la tranchée de grille (105) étant remplie d'un matériau d'électrode de grille (106), et une tranchée de pilier (107) adjacente à la région active (101) s'étendant plus profondément dans la région de dérive (102) que la tranchée de grille (105), la tranchée de pilier (107) étant remplie d'un matériau d'électrode de source (108) et du matériau d'électrode de grille (106), le matériau d'électrode de source (108) étant entouré par le matériau d'électrode de grille (106).