WO2024259647 - ARRAY SUBSTRATE AND DISPLAY APPARATUS
National phase entry is expected:
Publication Number
WO/2024/259647
Publication Date
26.12.2024
International Application No.
PCT/CN2023/101766
International Filing Date
21.06.2023
Title **
[English]
ARRAY SUBSTRATE AND DISPLAY APPARATUS
[French]
SUBSTRAT DE RÉSEAU ET APPAREIL D'AFFICHAGE
Applicants **
BOE TECHNOLOGY GROUP CO., LTD.
No.10 Jiuxianqiao Rd.
Chaoyang District, Beijing 100015, CN
CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
No.1188 Hezuo Rd., (West Zone), Hi-tech Development Zone
Chengdu, Sichuan 611731, CN
Inventors
LIANG, Cuicui
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
QIU, Haijun
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
ZHOU, Weifeng
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
BAO, Jiandong
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
SHI, Ling
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
LI, Shuo
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
GAO, Yamei
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
YANG, Chao
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
WANG, Bin
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
CNIPA
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1724 | |
| EPO | Filing, Examination | 9730 | |
| Japan | Filing | 597 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 3160 |
Total: 15693 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
An array substrate includes a base substrate; a signal line layer closest to an anode on the base substrate; an anode layer on a side of the signal line layer closest to the anode away from the base substrate; a pixel definition layer; and a plurality of subpixel apertures extending through the pixel definition layer. The anode layer includes a plurality of anodes. The signal line layer closest to the anode comprises a plurality of signal lines. An orthographic projection of a portion of a respective anode in a respective subpixel aperture on the base substrate at least partially overlaps with an orthographic projection of the signal line layer closest to the anode on the base substrate, forming one or more overlapping areas. The one or more overlapping areas have a substantial mirror symmetry with respect to a plane perpendicular to the respective anode and intersecting the respective anode.[French]
Un substrat de réseau comprend un substrat de base ; une couche de ligne de signal la plus proche d'une anode sur le substrat de base ; une couche d'anode sur un côté de la couche de ligne de signal la plus proche de l'anode à l'opposé du substrat de base ; une couche de définition de pixel ; et une pluralité d'ouvertures de sous-pixel s'étendant à travers la couche de définition de pixel. La couche d'anode comprend une pluralité d'anodes. La couche de ligne de signal la plus proche de l'anode comprend une pluralité de lignes de signal. Une projection orthographique d'une partie d'une anode respective dans une ouverture de sous-pixel respective sur le substrat de base chevauche au moins partiellement une projection orthographique de la couche de ligne de signal la plus proche de l'anode sur le substrat de base, formant une ou plusieurs zones de chevauchement. La ou les zones de chevauchement présentent une symétrie de miroir substantielle par rapport à un plan perpendiculaire à l'anode respective et croisant l'anode respective.