WO2024259575 - SENSOR CHIP, PRESSURE SENSOR, METHOD OF FABRICATING PRESSURE SENSOR
National phase entry:
Publication Number
WO/2024/259575
Publication Date
26.12.2024
International Application No.
PCT/CN2023/101242
International Filing Date
20.06.2023
Title **
[English]
SENSOR CHIP, PRESSURE SENSOR, METHOD OF FABRICATING PRESSURE SENSOR
[French]
PUCE DE CAPTEUR, CAPTEUR DE PRESSION, ET PROCÉDÉ DE FABRICATION DE CAPTEUR DE PRESSION
Applicants **
BOE TECHNOLOGY GROUP CO., LTD.
BEIJING BOE SENSOR TECHNOLOGY CO., LTD.
BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
Inventors
GUO, Weilong
LI, Yue
WEI, Qiuxu
WANG, Lihui
ZHANG, Taonan
HE, Nana
SUN, Jie
CHANG, Wenbo
QU, Feng
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2248 | |
| EPO | Filing, Examination, Granting | 18311 | |
| Japan | Filing, Examination, Granting | 2526 | |
| South Korea | Filing, Examination, Granting | 2688 | |
| USA | Filing, Examination, Granting | 5940 |

Total:
31,713
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Contact Us
Abstract[English]
A sensor chip includes a first base substrate (BS1); a piezoresistor (PR) and a resistor lead (RL) on the first base substrate (BS1); a second base substrate (BS2) on a side of the piezoresistor (PR) and the resistor lead (RL) away from the first base substrate (BS1); a metal wire bond (MWB) extending through the second base substrate (BS2) and connected to the resistor lead (RL) ; a redistribution layer (RDL) on a side of the second base substrate (BS2) away from the first base substrate (BS1); and a pressure reference chamber (PRC) between the first base substrate (BS1) and the second base substrate (BS2). The first base substrate (BS1) and the second base substrate (BS2) encapsulate at least a portion of the piezoresistor (PR) inside the pressure reference chamber (PRC). The metal wire bond (MWB) is connected to the resistor lead (RL) , and is connected to the redistribution layer (RDL). The resistor lead (RL) is connected to the piezoresistor (PR).[French]
L'invention concerne une puce de capteur comprenant : un premier substrat de base (BS1) ; une piézorésistance (PR) et un conducteur de résistance (RL) sur le premier substrat de base (BS1) ; un second substrat de base (BS2) sur un côté de la piézorésistance (PR) et du fil de résistance (RL) à l'opposé du premier substrat de base (BS1) ; une liaison par fil métallique (MWB) s'étendant à travers le second substrat de base (BS2) et connectée au fil de résistance (RL) ; une couche de redistribution (RDL) sur un côté du second substrat de base (BS2) à l'opposé du premier substrat de base (BS1) ; et une chambre de référence de pression (PRC) entre le premier substrat de base (BS1) et le second substrat de base (BS2). Le premier substrat de base (BS1) et le second substrat de base (BS2) encapsulent au moins une partie de la piézorésistance (PR) à l'intérieur de la chambre de référence de pression (PRC). La liaison par fil métallique (MWB) est connectée au fil de résistance (RL) et à la couche de redistribution (RDL). Le fil de résistance (RL) est connecté à la piézorésistance (PR).