WO2024259575 - SENSOR CHIP, PRESSURE SENSOR, METHOD OF FABRICATING PRESSURE SENSOR

National phase entry is expected:
Publication Number WO/2024/259575
Publication Date 26.12.2024
International Application No. PCT/CN2023/101242
International Filing Date 20.06.2023
Title **
[English] SENSOR CHIP, PRESSURE SENSOR, METHOD OF FABRICATING PRESSURE SENSOR
[French] PUCE DE CAPTEUR, CAPTEUR DE PRESSION, ET PROCÉDÉ DE FABRICATION DE CAPTEUR DE PRESSION
Applicants **
BOE TECHNOLOGY GROUP CO., LTD. No.10 Jiuxianqiao Rd. Chaoyang District, Beijing 100015, CN
BEIJING BOE SENSOR TECHNOLOGY CO., LTD. Room C-301C-302, Floor 3, Area C, Building 2, No.8 Xihuanzhong RD., BDA Daxing District, Beijing 100176, CN
BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. Room 407, Building 1, No.9 Dize Road, BDA Daxing District, Beijing 100176, CN
Inventors
GUO, Weilong No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
LI, Yue No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
WEI, Qiuxu No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
WANG, Lihui No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
ZHANG, Taonan No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
HE, Nana No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
SUN, Jie No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
CHANG, Wenbo No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
QU, Feng No.9 Dize Rd., BDA Daxing District, Beijing 100176, CN
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Quotation for National Phase entry

Country StagesTotal
China Filing1592
EPO Filing, Examination10947
Japan Filing529
South Korea Filing482
USA Filing, Examination3835
MasterCard Visa

Total: 17385

Abstract[English] A sensor chip includes a first base substrate (BS1); a piezoresistor (PR) and a resistor lead (RL) on the first base substrate (BS1); a second base substrate (BS2) on a side of the piezoresistor (PR) and the resistor lead (RL) away from the first base substrate (BS1); a metal wire bond (MWB) extending through the second base substrate (BS2) and connected to the resistor lead (RL) ; a redistribution layer (RDL) on a side of the second base substrate (BS2) away from the first base substrate (BS1); and a pressure reference chamber (PRC) between the first base substrate (BS1) and the second base substrate (BS2). The first base substrate (BS1) and the second base substrate (BS2) encapsulate at least a portion of the piezoresistor (PR) inside the pressure reference chamber (PRC). The metal wire bond (MWB) is connected to the resistor lead (RL) , and is connected to the redistribution layer (RDL). The resistor lead (RL) is connected to the piezoresistor (PR).[French] L'invention concerne une puce de capteur comprenant : un premier substrat de base (BS1) ; une piézorésistance (PR) et un conducteur de résistance (RL) sur le premier substrat de base (BS1) ; un second substrat de base (BS2) sur un côté de la piézorésistance (PR) et du fil de résistance (RL) à l'opposé du premier substrat de base (BS1) ; une liaison par fil métallique (MWB) s'étendant à travers le second substrat de base (BS2) et connectée au fil de résistance (RL) ; une couche de redistribution (RDL) sur un côté du second substrat de base (BS2) à l'opposé du premier substrat de base (BS1) ; et une chambre de référence de pression (PRC) entre le premier substrat de base (BS1) et le second substrat de base (BS2). Le premier substrat de base (BS1) et le second substrat de base (BS2) encapsulent au moins une partie de la piézorésistance (PR) à l'intérieur de la chambre de référence de pression (PRC). La liaison par fil métallique (MWB) est connectée au fil de résistance (RL) et à la couche de redistribution (RDL). Le fil de résistance (RL) est connecté à la piézorésistance (PR).
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