WO2024259575 - SENSOR CHIP, PRESSURE SENSOR, METHOD OF FABRICATING PRESSURE SENSOR
National phase entry:
Publication Number
WO/2024/259575
Publication Date
26.12.2024
International Application No.
PCT/CN2023/101242
International Filing Date
20.06.2023
Title **
[English]
SENSOR CHIP, PRESSURE SENSOR, METHOD OF FABRICATING PRESSURE SENSOR
[French]
PUCE DE CAPTEUR, CAPTEUR DE PRESSION, ET PROCÉDÉ DE FABRICATION DE CAPTEUR DE PRESSION
Applicants **
BOE TECHNOLOGY GROUP CO., LTD.
No.10 Jiuxianqiao Rd.
Chaoyang District, Beijing 100015, CN
BEIJING BOE SENSOR TECHNOLOGY CO., LTD.
Room C-301C-302, Floor 3, Area C, Building 2, No.8 Xihuanzhong RD., BDA
Daxing District, Beijing 100176, CN
BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
Room 407, Building 1, No.9 Dize Road, BDA
Daxing District, Beijing 100176, CN
Inventors
GUO, Weilong
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
LI, Yue
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
WEI, Qiuxu
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
WANG, Lihui
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
ZHANG, Taonan
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
HE, Nana
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
SUN, Jie
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
CHANG, Wenbo
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
QU, Feng
No.9 Dize Rd., BDA
Daxing District, Beijing 100176, CN
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
CNIPA
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1628 | |
| EPO | Filing, Examination | 10658 | |
| Japan | Filing | 588 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 3910 |
Total: 17266 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A sensor chip includes a first base substrate (BS1); a piezoresistor (PR) and a resistor lead (RL) on the first base substrate (BS1); a second base substrate (BS2) on a side of the piezoresistor (PR) and the resistor lead (RL) away from the first base substrate (BS1); a metal wire bond (MWB) extending through the second base substrate (BS2) and connected to the resistor lead (RL) ; a redistribution layer (RDL) on a side of the second base substrate (BS2) away from the first base substrate (BS1); and a pressure reference chamber (PRC) between the first base substrate (BS1) and the second base substrate (BS2). The first base substrate (BS1) and the second base substrate (BS2) encapsulate at least a portion of the piezoresistor (PR) inside the pressure reference chamber (PRC). The metal wire bond (MWB) is connected to the resistor lead (RL) , and is connected to the redistribution layer (RDL). The resistor lead (RL) is connected to the piezoresistor (PR).[French]
L'invention concerne une puce de capteur comprenant : un premier substrat de base (BS1) ; une piézorésistance (PR) et un conducteur de résistance (RL) sur le premier substrat de base (BS1) ; un second substrat de base (BS2) sur un côté de la piézorésistance (PR) et du fil de résistance (RL) à l'opposé du premier substrat de base (BS1) ; une liaison par fil métallique (MWB) s'étendant à travers le second substrat de base (BS2) et connectée au fil de résistance (RL) ; une couche de redistribution (RDL) sur un côté du second substrat de base (BS2) à l'opposé du premier substrat de base (BS1) ; et une chambre de référence de pression (PRC) entre le premier substrat de base (BS1) et le second substrat de base (BS2). Le premier substrat de base (BS1) et le second substrat de base (BS2) encapsulent au moins une partie de la piézorésistance (PR) à l'intérieur de la chambre de référence de pression (PRC). La liaison par fil métallique (MWB) est connectée au fil de résistance (RL) et à la couche de redistribution (RDL). Le fil de résistance (RL) est connecté à la piézorésistance (PR).