WO2023142143 - MICRO LED, MICRO LED ARRAY PANEL AND MANUFACUTURING METHOD THEREOF
National phase entry:
Publication Number
WO/2023/142143
Publication Date
03.08.2023
International Application No.
PCT/CN2022/075285
International Filing Date
31.01.2022
Title **
[English]
MICRO LED, MICRO LED ARRAY PANEL AND MANUFACUTURING METHOD THEREOF
[French]
MICRO-DEL, PANNEAU DE RÉSEAU DE MICRO-DEL ET SON PROCÉDÉ DE FABRICATION
Applicants **
JADE BIRD DISPLAY (SHANGHAI) LIMITED
Inventors
ZHU, Yuankun
FANG, Anle
LIU, Deshuai
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
CNIPA
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 6815 | |
| EPO | Filing, Examination, Granting | 213960 | |
| Japan | Filing, Examination, Granting | 5305 | |
| South Korea | Filing, Examination, Granting | 13468 | |
| USA | Filing, Examination, Granting | 43590 |
Total:
283,138
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A micro LED includes a first type semiconductor layer; and a light emitting layer formed on the first type semiconductor layer; wherein the first type semiconductor layer includes a mesa structure, a trench, and anion implantation fence separated from the mesa structure by the trench, wherein the ion implantation fence is formed around the trench, the trench is formed around the mesa structure; and an electrical resistance of the ion implantation fence is higher than an electrical resistance of the mesa structure.[French]
La présente invention concerne une micro LED qui comprend une couche semi-conductrice de premier type et une couche électroluminescente formée sur la couche semi-conductrice de premier type. La couche semi-conductrice de premier type comprend une structure mésa, une tranchée et une barrière d'implantation ionique séparée de la structure mésa par la tranchée, la barrière d'implantation ionique étant formée autour de la tranchée, la tranchée étant formée autour de la structure mésa, et la résistance électrique de la barrière d'implantation ionique étant supérieure à celle de la structure mésa.