WO2023142140 - MICRO LED, MICRO LED ARRAY PANEL AND MANUFACUTURING METHOD THEREOF
National phase entry:
Publication Number
WO/2023/142140
Publication Date
03.08.2023
International Application No.
PCT/CN2022/075282
International Filing Date
31.01.2022
Title **
[English]
MICRO LED, MICRO LED ARRAY PANEL AND MANUFACUTURING METHOD THEREOF
[French]
MICRO-DEL, PANNEAU DE RÉSEAU DE MICRO-DEL ET SON PROCÉDÉ DE FABRICATION
Applicants **
JADE BIRD DISPLAY (SHANGHAI) LIMITED
7F, No. 11, 13, Lane 99, Haiyang 4th Road, Lin-gang Special Area, China (Shanghai) Pilot Free Trade Zone
Pudong New Area, Shanghai 201306, CN
Inventors
ZHU, Yuankun
7F, No. 11, 13, Lane 99, Haiyang 4th Road, Lin-gang Special Area, China (Shanghai) Pilot Free Trade Zone
Pudong New Area, Shanghai 201306, CN
FANG, Anle
7F, No. 11, 13, Lane 99, Haiyang 4th Road, Lin-gang Special Area, China (Shanghai) Pilot Free Trade Zone
Pudong New Area, Shanghai 201306, CN
LIU, Deshuai
7F, No. 11, 13, Lane 99, Haiyang 4th Road, Lin-gang Special Area, China (Shanghai) Pilot Free Trade Zone
Pudong New Area, Shanghai 201306, CN
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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International Searching Authority |
CNIPA
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
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| Translation |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 4858 | |
| EPO | Filing, Examination | 91786 | |
| Japan | Filing | 590 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 28760 |
Total: 126476 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A micro LED includes a first type semiconductor layer (110), a first type cap layer (114), a light emitting layer (130), a second type cap layer (124) and a second type semiconductor layer (120), wherein the first type semiconductor layer (110) includes a mesa structure (111), a trench (112), and an ion implantation fence (113) separated from the mesa structure (111), the trench (112) extends up into at least part of the first type cap layer (114) and is formed around the mesa structure (111), and the ion implantation fence (113) is formed around the trench (112). An electrical resistance of the ion implantation fence (113) is higher than an electrical resistance of the mesa structure (111), and the ion implantation fence (113) can absorb light from the mesa structure (111).[French]
L'invention concerne une micro-DEL comprenant une couche semi-conductrice de premier type (110), une couche de capuchon de premier type (114), une couche électroluminescente (130), une couche de capuchon de second type (124) et une couche semi-conductrice de second type (120), la couche semi-conductrice de premier type (110) comprenant une structure mesa (111), une tranchée (112) et une barrière d'implantation ionique (113) séparée de la structure mesa (111), la tranchée (112) s'étendant vers le haut dans au moins une partie de la couche de capuchon de premier type (114) et étant formée autour de la structure mesa (111), et la barrière d'implantation ionique (113) étant formée autour de la tranchée (112). Une résistance électrique de la barrière d'implantation ionique (113) est supérieure à une résistance électrique de la structure mesa (111), et la barrière d'implantation ionique (113) peut absorber la lumière provenant de la structure mesa (111).