WO2023130198 - RADIATION DETECTORS AND METHODS OF FABRICATION
National phase entry:
Publication Number
WO/2023/130198
Publication Date
13.07.2023
International Application No.
PCT/CN2022/070036
International Filing Date
04.01.2022
Title **
[English]
RADIATION DETECTORS AND METHODS OF FABRICATION
[French]
DÉTECTEURS DE RAYONNEMENT ET PROCÉDÉS DE FABRICATION
Applicants **
SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
B507, Block A And B, Nanshan Medical Device Industrial Park, Nanhai Avenue 1019, Nanshan District
Shenzhen, Guangdong 518000, CN
Inventors
CAO, Peiyan
B507, Block A And B, Nanshan Medical Device Industrial Park, Nanhai Avenue 1019, Nanshan District
Shenzhen, Guangdong 518000, CN
LIU, Yurun
B507, Block A And B, Nanshan Medical Device Industrial Park, Nanhai Avenue 1019, Nanshan District
Shenzhen, Guangdong 518000, CN
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
CNIPA
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1187 | |
| EPO | Filing, Examination | 8832 | |
| Japan | Filing | 591 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 2710 |
Total: 13802 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A method comprises: forming M connection regions on a substrate, M being a positive integer (1210); forming a radiation absorption layer on the substrate, the M connection regions sandwiched between the radiation absorption layer and the substrate (1220); and forming M electrodes respectively in electrical connection to the M connection regions (1230).[French]
Procédé consiste à : former M régions de connexion sur un substrat, M étant un nombre entier positif (1210) ; former une couche d'absorption de rayonnement sur le substrat, les M régions de connexion étant prises en sandwich entre la couche d'absorption de rayonnement et le substrat (1220) ; et former M électrodes respectivement en connexion électrique avec les M régions de connexion (1230).