WO2023060549 - IMPEDANCE MATCHING CIRCUIT FOR COMPLEX LOAD
National phase entry is expected:
Publication Number
WO/2023/060549
Publication Date
20.04.2023
International Application No.
PCT/CN2021/124076
International Filing Date
15.10.2021
Title **
[English]
IMPEDANCE MATCHING CIRCUIT FOR COMPLEX LOAD
[French]
CIRCUIT D'ADAPTATION D'IMPÉDANCE POUR CHARGE COMPLEXE
Applicants **
HUAWEI TECHNOLOGIES CO., LTD.
Huawei Administration Building
Bantian,Longgang District
Shenzhen, Guangdong 518129, CN
Inventors
MOSTAFA, Mohamed Hesham Mohamed
Aalto University
Maarintie 8
02150 Espoo, FI
HA-VAN, Nam
Aalto University
Maarintie 8
02150 Espoo, FI
JAYATHURATHNAGE, Prasad Kumara Sampath
Aalto University
Maarintie 8
02150 Espoo, FI
WANG, Xuchen
Aalto University
Maarintie 8
02150 Espoo, FI
PTITCYN, Grigorii
Aalto University
Maarintie 8
02150 Espoo, FI
MIRMOOSA, Mohammad Sajjad
Aalto University
Maarintie 8
02150 Espoo, FI
TRETYAKOV, Sergei
Aalto University
Maarintie 8
02150 Espoo, FI
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| * | |
International Searching Authority |
CNIPA
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Translation |
|
Recalculate
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing | 1060 | |
| EPO | Filing, Examination | 6674 | |
| Japan | Filing | 587 | |
| South Korea | Filing | 482 | |
| USA | Filing, Examination | 2710 |
Total: 11513 USD
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Abstract[English]
A impedance matching circuit (100) is connected between the signal source (200) and the complex load (300) and comprises a resistive circuit (110) that is modulated by a modulation signal (Vmod) thereby modulating the resistive circuit (110) synchronously with a high frequency modulated broadband signal (VS) from the signal source (200). The modulation signal (Vmod) and the high frequency modulated broadband signal (VS) are based on a common low frequency baseband signal. Thereby, improved power transfer is possible with low signal distortion.[French]
La présente invention concerne un circuit d'adaptation d'impédance (100) qui est connecté entre la source de signal (200) et la charge complexe (300) et comprend un circuit résistif (110) qui est modulé par un signal de modulation (Vmod) modulant ainsi le circuit résistif (110) de manière synchrone avec un signal large bande modulé en fréquence (VS) à partir de la source de signal (200). Le signal de modulation (Vmod) et le signal large bande modulé haute fréquence (VS) sont basés sur un signal de bande de base basse fréquence commun. Ainsi, un transfert de puissance amélioré est possible avec une faible distorsion de signal.