WO2024260593 - A SEMICONDUCTOR STRUCTURE
National phase entry:
Publication Number
WO/2024/260593
Publication Date
26.12.2024
International Application No.
PCT/EP2024/056803
International Filing Date
14.03.2024
Title **
[English]
A SEMICONDUCTOR STRUCTURE
[French]
STRUCTURE SEMI-CONDUCTRICE
Applicants **
IQE PLC
Inventors
DARGIS, Rytis
CLARK, Andrew
Priority Data
2309447.7
22.06.2023
GB
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
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| Number of Drawings | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2516 | |
| EPO | Filing, Examination, Granting | 16813 | |
| Japan | Filing, Examination, Granting | 2679 | |
| South Korea | Filing, Examination, Granting | 3141 | |
| USA | Filing, Examination, Granting | 7140 |
Total:
32,289
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
An epitaxial semiconductor structure comprising a silicon substrate in <100> orientation. On the substrate are sequentially a bixbyite oxide layer in <111> orientation, a rare earth nitride layer, an aluminium nitride layer, and a gallium nitride layer in <0001> orientation. Advantageously the semiconductor structure results in a better quality GaN layer.[French]
L'invention concerne une structure semi-conductrice épitaxiale comprenant un substrat de silicium dans une orientation <100>. Sur le substrat sont séquentiellement présentes une couche d'oxyde de bixbyite dans une orientation <111>, une couche de nitrure de terre rare, une couche de nitrure d'aluminium et une couche de nitrure de gallium dans une orientation <0001>. Avantageusement, la structure semi-conductrice permet d'obtenir une couche de GaN de meilleure qualité.