WO2023046762 - OPTOELECTRONIC DEVICE
National phase entry is expected:
Publication Number
WO/2023/046762
Publication Date
30.03.2023
International Application No.
PCT/EP2022/076242
International Filing Date
21.09.2022
Title **
[English]
OPTOELECTRONIC DEVICE
[French]
DISPOSITIF OPTOÉLECTRONIQUE
Applicants **
ROCKLEY PHOTONICS LIMITED
Inventors
GUOMIN, Yu
ZILKIE, Aaron John
RICKMAN, Andrew George
Priority Data
63/247,297
22.09.2021
US
17/848,328
23.06.2022
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2540 | |
| EPO | Filing, Examination, Granting | 12692 | |
| Japan | Filing, Examination, Granting | 2371 | |
| South Korea | Filing, Examination, Granting | 2544 | |
| USA | Filing, Examination, Granting | 5140 |
Total:
25,287
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
An optoelectronic device. The optoelectronic device including: a silicon platform, including a silicon waveguide and a cavity, wherein a bed of the cavity is provided at least in part by a buried oxide layer; a lll-V semiconductor-based optoelectronic component, bonded to a bed of the cavity of the silicon platform; and a bridge-waveguide, located between the silicon waveguide and the lll-V semiconductor-based optoelectronic component.[French]
L'invention concerne un dispositif optoélectronique. Le dispositif optoélectronique comprend : une plate-forme en silicium, comprenant un guide d'ondes en silicium et une cavité, un lit de la cavité étant prévu au moins en partie par une couche d'oxyde enterrée; un composant optoélectronique à base de semi-conducteurs III-V, lié à un lit de la cavité de la plate-forme de silicium; et un guide d'ondes en pont, situé entre le guide d'ondes en silicium et le composant optoélectronique à base de semi-conducteurs III-V.