WO2023082069 - SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS AND METHOD
National phase entry:
Publication Number
WO/2023/082069
Publication Date
19.05.2023
International Application No.
PCT/CN2021/129658
International Filing Date
09.11.2021
Title **
[English]
SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS AND METHOD
[French]
DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS, APPAREIL ÉLECTRONIQUE ET PROCÉDÉ
Applicants **
HUAWEI TECHNOLOGIES CO., LTD.
Inventors
TAKAHASHI, Seiji
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
CNIPA
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1992 | |
| EPO | Filing, Examination, Granting | 15280 | |
| Japan | Filing, Examination, Granting | 2469 | |
| South Korea | Filing, Examination, Granting | 2590 | |
| USA | Filing, Examination, Granting | 6340 |
Total:
28,671
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A solid-state imaging device including: a photoelectric conversion part of a first conductivity type semiconductor, including a first side as an electromagnetic wave-incident side and a second side opposite the first side; an epitaxial layer being formed in a side portion of the photoelectric conversion part, and being placed apart from a first plane (A) (A) through the first side; and a separation layer being formed opposite the photoelectric conversion part with respect to the epitaxial layer.[French]
L'invention concerne un dispositif d'imagerie à semi-conducteurs comprenant: une partie de conversion photoélectrique d'un semi-conducteur d'un premier type de conductivité, comprenant un premier côté en tant que côté d'incidence d'ondes électromagnétiques et un second côté opposé au premier côté; une couche épitaxiale étant formée dans une partie latérale de la partie de conversion photoélectrique, et étant espacée d'un premier plan (A) (A) à travers le premier côté; et une couche de séparation étant formée à l'opposé de la partie de conversion photoélectrique par rapport à la couche épitaxiale.