WO2025062317 - MULTI-TERMINAL DEVICES WITH EPITAXIAL OXIDES ON SIC SUBSTRATES
National phase entry is expected:
Publication Number
WO/2025/062317
Publication Date
27.03.2025
International Application No.
PCT/IB2024/059075
International Filing Date
18.09.2024
Title **
[English]
MULTI-TERMINAL DEVICES WITH EPITAXIAL OXIDES ON SIC SUBSTRATES
[French]
DISPOSITIFS MULTI-TERMINAUX À OXYDES ÉPITAXIAUX SUR DES SUBSTRATS SIC
Applicants **
SILANNA UV TECHNOLOGIES PTE LTD
Inventors
ATANACKOVIC, Petar
Priority Data
63/584,661
22.09.2023
US
18/394,688
22.12.2023
US
18/628,178
05.04.2024
US
18/830,089
10.09.2024
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
| * | |
International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 5187 | |
| EPO | Filing, Examination, Granting | 26961 | |
| Japan | Filing, Examination, Granting | 2769 | |
| South Korea | Filing, Examination, Granting | 3426 | |
| USA | Filing, Examination, Granting | 9990 |
Total:
48,333
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
A multilayered semiconductor device includes a substrate comprising silicon carbide (SiC) and an epitaxial transition layer comprising a first epitaxial oxide material or SiC on the substrate. One or more epitaxial active regions comprising one or more second epitaxial oxide materials are formed on the epitaxial transition layer, and a metal layer is formed above the one or more epitaxial active regions, the metal layer comprising one or more electrical contacts. The multilayered semiconductor device comprises one of a metal-oxide field-effect transistor, a vertical conduction metal-oxide field-effect transistor, a lateral field-effect transistor, a metal-semiconductor field-effect transistor, a bipolar junction transistor, a junction field-effect transistor, a metal-insulator-semiconductor device, a PN device, a PNP device, an NPN device, or an insulated-gate bipolar transistor.[French]
Un dispositif à semi-conducteur multicouche comprend un substrat comprenant du carbure de silicium (SiC) et une couche de transition épitaxiale comprenant un premier matériau d'oxyde épitaxial ou du SiC sur le substrat. Une ou plusieurs régions actives épitaxiales comprenant un ou plusieurs seconds matériaux d'oxyde épitaxial sont formées sur la couche de transition épitaxiale, et une couche métallique est formée au-dessus de la ou des régions actives épitaxiales, la couche métallique comprenant un ou plusieurs contacts électriques. Le dispositif à semi-conducteur multicouche comprend un transistor à effet de champ métal-oxyde, un transistor à effet de champ métal-oxyde à conduction verticale, un transistor à effet de champ latéral, un transistor à effet de champ métal-semi-conducteur, un transistor à jonction bipolaire, un transistor à effet de champ à jonction, un dispositif métal-isolant-semi-conducteur, un dispositif PN, un dispositif PNP, un dispositif NPN ou un transistor bipolaire à grille isolée.