WO2023084275 - ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMANIUM OXIDES
National phase entry:
Publication Number
WO/2023/084275
Publication Date
19.05.2023
International Application No.
PCT/IB2021/060414
International Filing Date
10.11.2021
Title **
[English]
ULTRAWIDE BANDGAP SEMICONDUCTOR DEVICES INCLUDING MAGNESIUM GERMANIUM OXIDES
[French]
DISPOSITIFS SEMI-CONDUCTEURS À BANDE INTERDITE ULTRA-LARGE COMPRENANT DES OXYDES DE MAGNÉSIUM-GERMANIUM
Applicants **
SILANNA UV TECHNOLOGIES PTE LTD
Inventors
ATANACKOVIC, Petar
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
MOIP
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 4539 | |
| EPO | Filing, Examination, Granting | 58430 | |
| Japan | Filing, Examination, Granting | 3853 | |
| South Korea | Filing, Examination, Granting | 3853 | |
| USA | Filing, Examination, Granting | 16240 |
Total:
86,915
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.[French]
, ainsi que des procédés de fabrication des couches épitaxiales et des structures et des dispositifs semi-conducteurs.