WO2026109628 - HALBLEITERBAUELEMENT MIT INTEGRIERTER KURZSCHLUSSSTROMBEGRENZUNG
National phase entry is expected:
Publication Number
WO/2026/109628
Publication Date
28.05.2026
International Application No.
PCT/EP2025/083627
International Filing Date
20.11.2025
Title **
[German]
HALBLEITERBAUELEMENT MIT INTEGRIERTER KURZSCHLUSSSTROMBEGRENZUNG
[English]
SEMICONDUCTOR DEVICE WITH INTEGRATED SHORT-CIRCUIT CURRENT LIMITATION
[French]
DISPOSITIF À SEMI-CONDUCTEUR À LIMITATION DE COURANT DE COURT-CIRCUIT INTÉGRÉE
Applicants **
ROBERT BOSCH GMBH
Inventors
BARINGHAUS, Jens
Priority Data
102024211172.4
21.11.2024
DE
Application details
| Total Number of Claims/PCT | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1880 | |
| EPO | Filing, Examination, Granting | 8113 | |
| Japan | Filing, Examination, Granting | 1998 | |
| South Korea | Filing, Examination, Granting | 1757 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,488
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Abstract[German]
Halbleiterbauelement (100), insbesondere vertikales Halbleiterbauelement, vorzugsweise basierend auf einem Wide- oder Ultrawide-Bandgap-Halbleitermaterial, insbesondere Siliziumkarbid (SiC) oder Galliumnitrid (GaN), aufweisend zumindest eine schwach n-dotierte Driftlage (2) und eine darüber angeordnete Finnenstruktur (3), welche ein p-dotiertes Kanalgebiet (4) und ein hoch n-dotiertes Source-Gebiet (5) aufweist.[English]
Semiconductor device (100), in particular a vertical semiconductor device, preferably based on a wide- or ultrawide-bandgap semiconductor material, in particular silicon carbide (SiC) or gallium nitride (GaN), comprising at least one lightly n-doped drift layer (2) and a fin structure (3) which is arranged thereover and has a p-doped channel region (4) and a highly n-doped source region (5).[French]
L'invention concerne un dispositif à semi-conducteur (100), en particulier un dispositif à semi-conducteur vertical, de préférence à base d'un matériau semi-conducteur à large ou ultralarge bande interdite, en particulier du carbure de silicium (SiC) ou du nitrure de gallium (GaN), comprenant au moins une couche de dérive légèrement dopée n (2) et une structure d'ailette (3) qui est disposée sur celle-ci et présente une région de canal dopée p (4) et une région de source fortement dopée n (5).