WO2026130925 - A SEMICONDUCTOR STRUCTURE
National phase entry is expected:
Publication Number
WO/2026/130925
Publication Date
25.06.2026
International Application No.
PCT/EP2025/083356
International Filing Date
18.11.2025
Title **
[English]
A SEMICONDUCTOR STRUCTURE
[French]
STRUCTURE DE SEMI-CONDUCTEUR
Applicants **
IQE PLC
Inventors
CLARK, Andrew
DARGIS, Rytis
MARCHAND, Hugues
Priority Data
2418560.5
18.12.2024
GB
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
| * | |
International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 3110 | |
| EPO | Filing, Examination, Granting | 28380 | |
| Japan | Filing, Examination, Granting | 3358 | |
| South Korea | Filing, Examination, Granting | 4718 | |
| USA | Filing, Examination, Granting | 10940 |
Total:
50,506
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Abstract[English]
). The semiconductor is suitable to form a multicoloured µLED having emission at two or more wavelengths from the same epitaxial stack.[French]
). Le semi-conducteur est approprié pour former une µLED multicolore ayant une émission à au moins deux longueurs d'onde à partir du même empilement épitaxial.