WO2026099412 - POWER FIELD-EFFECT TRANSISTOR COMPRISING A FIN
National phase entry is expected:
Publication Number
WO/2026/099412
Publication Date
15.05.2026
International Application No.
PCT/EP2025/082244
International Filing Date
07.11.2025
Title **
[English]
POWER FIELD-EFFECT TRANSISTOR COMPRISING A FIN
[French]
TRANSISTOR À EFFET DE CHAMP DE PUISSANCE COMPRENANT UNE AILETTE
Applicants **
ROBERT BOSCH GMBH
Inventors
BARINGHAUS, Jens
UDREA, Florin
DONATO, Nazareno
TRAJKOVIC, Tanya
CHAN, Chunwa
PATHIRANA, Vasantha
Priority Data
102024210788.3
11.11.2024
DE
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
EPO
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1880 | |
| EPO | Filing, Examination, Granting | 8126 | |
| Japan | Filing, Examination, Granting | 2001 | |
| South Korea | Filing, Examination, Granting | 1757 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,504
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Abstract[English]
The invention relates to a Power Field-effect transistor comprising a fin (FinFET) (100), wherein the power FinFET (100) comprises a drain contact (1), a substrate region (2) of a first dope type aligned to the drain contact (1), a drift region (3) of the first dope type comprising a base (31) with a lateral surface (32) and a mesa region forming the fin (33), a first passivation layer (5) aligned partially to the fin (33) and partially extending parallel to the lateral surface (32), a gate contact (7) aligned at least partially to the first passivation layer (5), a second passivation layer (8) separating the gate contact (7) and a source contact (6) aligned at a top of the fin (33), wherein a material of the substrate region (2) and the drift region (3) is an ultra-wide bandgap semiconductor material.[French]
L'invention concerne un transistor à effet de champ de puissance comprenant une ailette (FinFET) (100), ce FinFET de puissance (100) comprenant un contact de drain (1), une région de substrat (2) d'un premier type de dopage aligné sur le contact de drain (1), une région de dérive (3) du premier type de dopage comprenant une base (31) présentant une surface latérale (32) et une région mesa formant l'ailette (33), une première couche de passivation (5) alignée partiellement sur l'ailette (33) et s'étendant partiellement parallèlement à la surface latérale (32), un contact de grille (7) aligné au moins partiellement sur la première couche de passivation (5), une deuxième couche de passivation (8) séparant le contact de grille (7) et un contact de source (6) aligné au sommet de l'ailette (33). Un matériau de la région de substrat (2) et de la région de dérive (3) est un matériau semi-conducteur à bande interdite ultra large.