WO2026098963 - HALBLEITERBAUELEMENT
National phase entry is expected:
Publication Number
WO/2026/098963
Publication Date
15.05.2026
International Application No.
PCT/EP2025/080458
International Filing Date
22.10.2025
Title **
[German]
HALBLEITERBAUELEMENT
[English]
SEMICONDUCTOR COMPONENT
[French]
COMPOSANT À SEMI-CONDUCTEUR
Applicants **
ROBERT BOSCH GMBH
Inventors
MARTINEZ-LIMIA, Alberto
FEILER, Wolfgang
Priority Data
102024210704.2
07.11.2024
DE
Application details
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1880 | |
| EPO | Filing, Examination, Granting | 8113 | |
| Japan | Filing, Examination, Granting | 1998 | |
| South Korea | Filing, Examination, Granting | 1757 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
18,488
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Abstract[German]
Die Erfindung betrifft ein Halbleiterbauelement, vorzugsweise MISFET, insbesondere PowerMISFET, vorzugsweise basierend auf einem Wide-Bandgap-Halbleitermaterial, insbesondere Siliziumkarbid (SiC), aufweisend zumindest eine ein aktives Gebiet definierende aktive Halb-Zelle (30), wobei die aktive Halb-Zelle (30) ein p-dotiertes pBody-Gebiet (8) und ein n-dotiertes Source-Gebiet (9) aufweist.[English]
The invention relates to a semiconductor component, preferably a MISFET, in particular a PowerMISFET, preferably based on a wide-bandgap semiconductor material, in particular silicon carbide (SiC), having at least one active half-cell (30) defining an active region, wherein the active half-cell (30) has a p-doped pBody region (8) and a n-doped Source region (9).[French]
L'invention concerne un composant à semi-conducteur, de préférence un MISFET, en particulier un PowerMISFET, de préférence faisant appel à un matériau semi-conducteur à large bande interdite, en particulier du carbure de silicium (SiC), comprenant au moins une demi-cellule active (30) définissant une région active, la demi-cellule active (30) comportant une région pBody dopée p (8) et une région source dopée n (9).