WO2023194483 - SUBSTRATE COMPRISING CONFORMAL METAL CARBIDE COATING
National phase entry:
Publication Number
WO/2023/194483
Publication Date
12.10.2023
International Application No.
PCT/EP2023/059028
International Filing Date
05.04.2023
Title **
[English]
SUBSTRATE COMPRISING CONFORMAL METAL CARBIDE COATING
[French]
SUBSTRAT COMPRENANT UN REVÊTEMENT DE CARBURE MÉTALLIQUE CONFORME
Applicants **
SGL CARBON SE
Inventors
WIJAYAWARDHANA, Charles
THIELEMANN, Christian
HUANG, Jing-Jia
FORSBERG, Urban
PEDERSEN, Henrik
Priority Data
102022203416.3
06.04.2022
DE
Application details
| Total Number of Claims/PCT | * |
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| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
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International Searching Authority |
EPO
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| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
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| Type of Assignment |
The Standard Agent's Assignment
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| Applicant's Legal Status |
Legal Entity
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2221 | |
| EPO | Filing, Examination, Granting | 9252 | |
| Japan | Filing, Examination, Granting | 2183 | |
| South Korea | Filing, Examination, Granting | 2133 | |
| USA | Filing, Examination, Granting | 5940 |

Total:
21,729
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
In a first aspect, the present disclosure relates to a method for coating a substrate with a metal or transition metal carbide by thermal chemical vapor deposition, wherein the method comprises the following steps: -Placing a substrate in a reaction chamber, and -Supplying the reaction chamber with SiCl4, ethene and a carrier gas, and wherein a process temperature in the reaction chamber is between about 900 °C to about 1050 °C.[French]
Selon un premier aspect, la présente invention concerne un procédé de revêtement d'un substrat avec un métal ou un carbure de métal de transition par dépôt chimique en phase vapeur thermique, le procédé comprenant les étapes suivantes : - le placement d'un substrat dans une chambre de réaction, et - l'alimentation de la chambre de réaction avec du SiCl4, de l'éthène et un gaz porteur, et une température de traitement dans la chambre de réaction étant comprise entre environ 900 °C et environ 1050° C