WO2025097351 - PIXEL CIRCUIT AND CMOS IMAGE SENSOR
National phase entry is expected:
Publication Number
WO/2025/097351
Publication Date
15.05.2025
International Application No.
PCT/CN2023/130597
International Filing Date
09.11.2023
Title **
[English]
PIXEL CIRCUIT AND CMOS IMAGE SENSOR
[French]
CIRCUIT DE PIXEL ET CAPTEUR D'IMAGE CMOS
Applicants **
HUAWEI TECHNOLOGIES CO., LTD.
Inventors
MONOI, Makoto
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| 译文 |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1891 | |
| EPO | Filing, Examination, Granting | 14438 | |
| Japan | Filing, Examination, Granting | 2307 | |
| South Korea | Filing, Examination, Granting | 2376 | |
| USA | Filing, Examination, Granting | 5940 |
Total:
26,952
The term for entry into the National Phase has expired. This quotation is for informational purposes only
Contact Us
Abstract[English]
A pixel circuit according to the present embodiment comprises: a photodiode; a transfer gate; a floating diffusion; a reset transistor; a charge storage element; an amplification transistor; and a selection transistor, wherein the transfer gate is coupled to a cathode of the photodiode and a gate of the amplification transistor, wherein the floating diffusion, a source of the reset transistor, and the charge storage element are coupled to a signal line connecting between the transfer gate and the gate of the amplification transistor, respectively, in a branched manner, and wherein a drain of the selection transistor is coupled to a source of the amplification transistor.[French]
Un circuit de pixel selon le présent mode de réalisation comprend : une photodiode ; une grille de transfert ; une diffusion flottante ; un transistor de réinitialisation ; un élément de stockage de charge ; un transistor d'amplification ; et un transistor de sélection, la grille de transfert étant couplée à une cathode de la photodiode et à une grille du transistor d'amplification, la diffusion flottante, une source du transistor de réinitialisation et l'élément de stockage de charge étant couplés à une ligne de signal connectant la grille de transfert et la grille du transistor d'amplification, respectivement, de manière ramifiée, et un drain du transistor de sélection étant couplé à une source du transistor d'amplification.