WO2023123161 - IMAGING SYSTEMS WITH IMAGE SENSORS FOR SIDE RADIATION INCIDENCE DURING IMAGING
National phase entry:
Publication Number
WO/2023/123161
Publication Date
06.07.2023
International Application No.
PCT/CN2021/142884
International Filing Date
30.12.2021
Title **
[English]
IMAGING SYSTEMS WITH IMAGE SENSORS FOR SIDE RADIATION INCIDENCE DURING IMAGING
[French]
SYSTÈMES D'IMAGERIE AVEC CAPTEURS D'IMAGE POUR INCIDENCE DE RAYONNEMENT LATÉRAL PENDANT L'IMAGERIE
Applicants **
SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
Inventors
CAO, Peiyan
LIU, Yurun
Application details
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Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1816 | |
| EPO | Filing, Examination, Granting | 13494 | |
| Japan | Filing, Examination, Granting | 2408 | |
| South Korea | Filing, Examination, Granting | 2521 | |
| USA | Filing, Examination, Granting | 4740 |
Total:
24,979
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
Disclosed herein is a system comprising an image sensor (600) which comprises: M metal layers (metal layers (i), i=1,..., M) (610) and M radiation detectors (radiation detectors (i), i=1,..., M) (105). For each value of i, the radiation detector (i) (105) comprises (A) a radiation absorption layer (i) (115) which comprises multiple sensing elements (150), and (B) Ni integrated circuit chips (125) configured to process electrical signals generated in the radiation absorption layer (i) (115). M is an integer greater than 1. Ni, i=1,..., M are positive integers. The M metal layers (610) and the radiation absorption layers (i) (115), i=1,..., M together form a stack of layers.[French]
La présente invention concerne un système comprenant un capteur d'image (600) qui comporte : M couches métalliques (couches métalliques (i) , i = 1, ..., M) (610) et M détecteurs de rayonnement (détecteurs de rayonnement (i) , i = 1, ..., M) (105). Pour chaque valeur de i, le détecteur de rayonnement (i) (105) comprend (A) une couche d'absorption de rayonnement (i) (115) qui comporte plusieurs éléments de détection (150), et (B) des puces de circuit intégré (125) configurées pour traiter les signaux électriques générés dans la couche d'absorption de rayonnement (i) (115). M est un nombre entier supérieur à 1. Ni, i = 1,..., M sont des nombres entiers positifs. Les M couches métalliques (610) et les couches d'absorption de rayonnement (i) (115), i = 1,..., M forment ensemble un empilement de couches.