WO2023004803 - ARRAY SUBSTRATE AND DISPLAY APPARATUS
National phase entry:
Publication Number
WO/2023/004803
Publication Date
02.02.2023
International Application No.
PCT/CN2021/109868
International Filing Date
30.07.2021
Title **
[English]
ARRAY SUBSTRATE AND DISPLAY APPARATUS
[French]
SUBSTRAT MATRICIEL ET APPAREIL D'AFFICHAGE
Applicants **
BOE TECHNOLOGY GROUP CO., LTD.
CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Inventors
ZHOU, Da
WANG, Jianbo
ZHANG, Taoran
HUANG, Li
ZHOU, Yang
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
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| Number of Office Actions | * |
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International Searching Authority |
CNIPA
* |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Legal Entity
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| * | |
| * | |
| * | |
| * | |
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| Entry into National Phase under |
Chapter I
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| Patent Delivery |
Send the Letters Patent by Courier
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| 译文 |
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** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 2150 | |
| EPO | Filing, Examination, Granting | 17008 | |
| Japan | Filing, Examination, Granting | 2501 | |
| South Korea | Filing, Examination, Granting | 2736 | |
| USA | Filing, Examination, Granting | 5540 |
Total:
29,935
The term for entry into the National Phase has expired. This quotation is for informational purposes only
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Abstract[English]
An array substrate includes a planarization layer; an anode material layer on the planarization layer and in a peripheral area of the array substrate; and a plurality of gas releasing vias extending through the anode material layer configured to release gas in the planarization layer during a fabrication process. An aperture size of a first respective gas releasing via in a first region is smaller than an aperture size of a second respective gas releasing via in a second region.[French]
Un substrat de réseau comprend une couche de planarisation ; une couche de matériau d'anode sur la couche de planarisation et dans une zone périphérique du substrat de réseau ; et une pluralité de trous d'interconnexion de libération de gaz s'étendant à travers la couche de matériau d'anode conçus pour libérer du gaz dans la couche de planarisation pendant un processus de fabrication. Une taille d'ouverture d'un premier trou d'interconnexion de libération de gaz respectif dans une première région est inférieure à une taille d'ouverture d'un second trou d'interconnexion de libération de gaz respectif dans une seconde région.