WO2025250248 - HIGH EFFICIENCY PLASMA SOURCE WITH CHEMISTRY CONVERSION
National phase entry is expected:
Publication Number
WO/2025/250248
Publication Date
04.12.2025
International Application No.
PCT/US2025/023039
International Filing Date
03.04.2025
Title **
[English]
HIGH EFFICIENCY PLASMA SOURCE WITH CHEMISTRY CONVERSION
[French]
SOURCE DE PLASMA À HAUT RENDEMENT AVEC UNE CONVERSION CHIMIQUE
Applicants **
NAGORNY, Vladimir
Inventors
NAGORNY, Vladimir
Priority Data
63/654,964
01.06.2024
US
Application details
| Total Number of Claims/PCT | * |
| Number of Independent Claims | * |
| Number of Priorities | * |
| Number of Multi-Dependent Claims | * |
| Number of Drawings | * |
| Pages for Publication | * |
| Number of Pages with Drawings | * |
| Pages of Specification | * |
| * | |
| Number of Office Actions | * |
| * | |
International Searching Authority |
USPTO
* |
| * | |
| Recordal of a Change of the Applicant's Name/Address |
Change of Applicant's Name and Address
* |
| Type of Assignment |
The Standard Agent's Assignment
* |
| Applicant's Legal Status |
Natural Person
* |
| * | |
| * | |
| * | |
| * | |
| * | |
| Entry into National Phase under |
Chapter I
* |
| Patent Delivery |
Send the Letters Patent by Courier
* |
| Translation |
|
* The data is based on automatic recognition. Please verify and amend if necessary.
** IP-Coster compiles data from publicly available sources. If this data includes your personal information, you can contact us to request its removal.
Quotation for National Phase entry
| Country | Stages | Total | |
|---|---|---|---|
| China | Filing, Examination, Granting | 1955 | |
| EPO | Filing, Examination, Granting | 8736 | |
| Japan | Filing, Examination, Granting | 1954 | |
| South Korea | Filing, Examination, Granting | 1663 | |
| USA | Filing, Examination, Granting | 4310 |
Total:
18,618
Contact Us
Abstract[English]
An apparatus for plasma treatment comprises a plasma source and a treatment chamber, which is arranged below the plasma source and separated from the plasma source by a grid. The plasma source for plasma treatment comprises: an outer chamber for plasma generation formed between the outer dielectric wall and a sidewall of a dual gas injection insert, with one injection port at the top of the insert and the second injection port at the lower part of the insert; an RF antenna for the first gas plasma generation along the periphery of the outer chamber positioned between injection ports; a conversion zone below the second injection port near the bottom of the insert for conversion the first plasma into the second plasma; a plasma transfer chamber below the insert and above the grid. A method for efficient plasma and radicals generation using generation of a first gas plasma followed by its conversion into another gas plasma.[French]
L'invention concerne un appareil de traitement au plasma qui comprend une source de plasma et une chambre de traitement, qui est agencée au-dessous de la source de plasma et séparée de la source de plasma par une grille. La source de plasma pour le traitement au plasma comprend : une chambre externe pour la génération de plasma formée entre la paroi diélectrique externe et une paroi latérale d'un insert d'injection de gaz double, avec un orifice d'injection au sommet de l'insert et le second orifice d'injection au niveau de la partie inférieure de l'insert ; une antenne RF pour la génération de premier plasma gazeux le long de la périphérie de la chambre externe positionnée entre des orifices d'injection ; une zone de conversion au-dessous du second orifice d'injection à proximité du fond de l'insert pour la conversion du premier plasma en second plasma ; une chambre de transfert de plasma au-dessous de l'insert et au-dessus de la grille. L'invention concerne un procédé de génération efficace de plasma et de radicaux à l'aide de la génération d'un premier plasma gazeux suivi de sa conversion en un autre plasma gazeux.